Hitachi, Ltd.

Hitachi Global Storage Technologies Netherlands B.v.

Andrew Stuart Troup

David Arfon Williams

Hiroshi Fukuda

Bruce Alvin Gurney

Ernesto Esteban Marinero

Susumu Ogawa

Joerg Wunderlich

Jörg Wunderlich

David Williams

A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Fabrication of mesoscopic lorentz magnetoresistive structures

A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.

Magnetoresistance device

A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.

A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

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Cambridge, United Kingdom

Andrew Stuart Troup