Applied Materials, Inc.

Andrew Short

Mandyam Sriram

Keiichi Tanaka

David P Thompson

Srinivas Gandikota

Mark Joseph Saly

Pramit Manna

Bhaskar Jyoti Bhuyan

Eswaranand Venkatasubramanian

Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

In-situ film annealing with spatial atomic layer deposition

Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

Bottom-up gap-fill by surface poisoning treatment

Growing community of inventors

San Jose, CA, United States of America

Andrew Short