Seagate Technology Incorporated

International Business Machines Corporation

Andrew Robert Eckert

Michael Allen Seigler

Xiaomin Yang

Wayne Martin Moreau

Jeffrey Curtis Hedrick

Hiroshi Ito

Gregory Breyta

Phillip Joe Brock

Mark William Covington

Kang-Wook Lee

Robert Earl Rottmayer

Eric Gerhard Liniger

Daniel Joseph Dawson

Chao Liu

Ronald Anthony DellaGuardia

Leo L Linehan

Michael Kevin Minor

Eva Erika Simonyi

Premlatha J Jagannathan

Randolph J Smith

John C Hay, Jr

Kathleen H Martinek

Charlotte R DeWan

A component for use in a disc drive includes a component substrate having a substrate surface. A self-assembled image layer is formed over the substrate surface. The self-assembled image layer includes a developed region defining a feature with a developed width. Each component also includes a feature layer that is self-assembled over the image layer. The feature layer is joined by a self-assembly process to the developed region. The feature layer has a feature width that is limited to the developed width.

Disc drive magnetic component with self assembled features

A lithography method for plating sub-100 nm narrow trenches, including providing a thin undercoat dissolution layer intermediate a seed layer and a resist layer, wherein the undercoat dissolution layer is relatively completely cleared off the seed layer by the developer solution such that the sides of the narrow trench will be generally vertical, particularly at the base of the narrow trench, thus facilitating plating the narrow trench with a high magnetic moment material.

Electron beam lithography method for plating sub-100 nm trenches

A method for making a magnetic sensor for a disk drive read head, the method comprising the steps of depositing a magnetoresistive stack on a surface of a first layer of material, depositing a resist layer on a first portion of the magnetoresistive stack, removing a second portion of the magnetoresistive stack not covered by the resist layer, depositing a layer of additional material on the magnetoresistive stack, the resist material, and the surface of the first layer, removing the additional material from sidewalls of the resist material, and using a lift-off process to remove the resist material. Magnetic sensors made by the above process are also included. A method for making a semiconductor device is also provided, the method comprising the steps of depositing a layer of first material on a surface of substrate, depositing a resist layer on a first portion of the first material, removing a second portion of the layer of the first material not covered by the resist layer, depositing a layer of additional material on the first material, the resist layer, and the surface of the substrate, removing the additional material from sidewalls of the resist layer, and using a lift-off process to remove the resist layer.

Single layer lift-off method for making an electronic device

A write head comprises a yoke including a top pole and a bottom pole, the top pole including a layer of insulating material, a layer of a first magnetic material positioned on a surface of the layer of insulating material, the first magnetic material having a first end positioned adjacent to an air bearing surface of the write pole, and a layer of a second magnetic material positioned on the surface of the layer of insulating material, the second magnetic material having a lower magnetic moment than the first magnetic material and being positioned to conduct magnetic flux between the return pole and the layer of first magnetic material. The method of constructing the write head and a disc drive including the write head are also included.

Perpendicular write head with high magnetization pole material and method of fabricating the write head

A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90&deg; C. or above so as to provide a surface containing Si&mdash;O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si&mdash;O bonds.

Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density

Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.

Photo acid generator compounds, photo resists, and method for improving

Growing community of inventors

Pittsburgh, PA, United States of America

Andrew Robert Eckert