Analog Devices,inc.

Andrew Proudman

Puneet Srivastava

Daniel Piedra

Kenneth Flanders

Denis Michael Murphy

Leslie P Green

Peter R Stubler

Michael W Judy

Xin Zhang

George M Molnar

Laura Cornelia Popa

Nikolay Pokrovskiy

Christopher Needham

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Aluminum-based gallium nitride integrated circuits

Gallium nitride integrated circuits including non-gold-based metallic materials

A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

Stress-isolated MEMS device comprising substrate having cavity and method of manufacture

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Medford, MA, United States of America

Andrew Proudman