International Business Machines Corporation

Andrew P Mansson

Cyril Cabral, Jr

Christian Lavoie

Renee Tong Mo

Mahadevaiyer Krishnan

Jay William Strane

Randolph F Knarr

Balasubramanian S Pranatharthi Haran

Horatio Seymour Wildman

Michael A Cobb

Asa Frye

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiOand SiNis not converted into a metal alloy silicide contact during the annealing step A. selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

Method and process for forming a self-aligned silicide contact

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiOand SiNis not converted into a metal alloy silicide contact during the annealing step. A selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

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Gilbert, AZ, United States of America

Andrew P Mansson