Multiprobe, Inc.

Angstrom Science, Inc.

Advanced Micro Devices Corporation

Veeco Instruments Inc.

Dcg Systems Gmbh

Fei Efa, Inc.

Andrew Norman Erickson

Casey Patrick Hare

Stephen Bradley Ippolito

Kyle Alfred Hofstatter

Roger L Alvis

Bryan M Tracy

Jeremias D Romero

Jeffrey M Markakis

Sean Dale Zumwalt

Peter De Wolf

Ayesha R Kizchery

Anton L Riley

This specification discloses a method and implementations improving the field of holding or mounting Scanning Probe Microscopy probe tips for use and alignment. Specifically, the invention allows probes to be mounted replaceably to a very small SPM actuator and aligned in 5 axis permitting alignment of cantilever to beam and reflected beam to detector. The invention allows for great simplification of SPM design while allowing reduction in sizes and masses of tip mounting apparatus thereby improving performance.

Scanned probe mounting design

A displacement sensor has a graded index multi-mode fiber with a length that is an odd multiple of a quarter pitch length of the graded index multi-mode fiber and a single-mode optical fiber fusion spliced to the first end of said graded index multi-mode fiber. A reflective mirror coating is applied to a planar facet on the second end of said graded index multi-mode fiber. A plurality of mechanical attachments are spaced along the graded index multi-mode fiber and single-mode optical fiber that mechanically deform said graded index multi-mode fiber, when any one of said plurality of mechanical attachments is displaced relative to any other one of said plurality of mechanical attachments.

Fiber optic displacement sensor

Using a local-potential-driving probe drives a conductor to a known potential while adjacent lines are grounded through the sample body reduces electrostatic scanning microscope signal from adjacent lines, allows imaging of metal lines deeper in the sample. Providing different potentials locally on different conductive lines using multiple local-potential-driving probes allows different conductors to be highlighted in the same image, for example, by changing the phase of the signal being applied to the different local-potential-driving probes.

Method for imaging a feature using a scanning probe microscope

A SPM head incorporates a probe and a cantilever on which the probe is mounted. The cantilever has a planar reflecting surface proximate a free end of the cantilever. The cantilever extends from a mechanical mount and a single-mode optical fiber is supported by the mechanical mount to provide a beam. A micromirror is mounted to reflect the beam substantially 90&#xb0; to the planar reflecting surface.

Scanning probe microscope head design

Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.

Apparatus and method for combined micro-scale and nano-scale C-V, Q-V, and I-V testing of semiconductor materials

A SPM head incorporates a probe and a cantilever on which the probe is mounted. The cantilever has a planar reflecting surface proximate a free end of the cantilever. The cantilever extends from a mechanical mount and a single-mode optical fiber is supported by the mechanical mount to provide a beam axis at an angle away from normal relative to the reflecting surface.

A semiconductor wafer processing tool has a support structure for a coarse motion positioning system. A measurement head having a rigid super structure is supported from the support structure by vibration isolators and a top plate is mounted to the super structure. A vacuum transfer chuck is releasably carried by the coarse motion positioning system and releasably adherable to the top plate by application of vacuum. The vacuum transfer chuck supports a semiconductor wafer.

Semiconductor wafer isolated transfer chuck

A method and apparatus for scanning multiple scanning probe microscopes in close proximity, to scan overlapping scan areas at the same time while avoiding collision employs a control system providing drive signals to a first Atomic Force Microscope (AFM) and calculated drive signals to additional AFMs based on the first drive signals and the relative position of the additional AFMs to the first AFM for consistent spaced motion. Scanning and Failure Analysis (FA) probing of multiple feature of interest using multiple APMs allows for reduced time for locating FA features to set up measurements.

Software synchronization of multiple scanning probes

The present invention comprises an apparatus and a method for using multiple scanning probes to deconvolve tip artifacts in scanning probe microscopes and other scanning probe systems. The invention uses multiple scanning probe tips of different geometries or orientations to scan a feature, such as a semiconductor line or trench, and to display the scan data such that tip artifacts from each tip can be omitted from the measurement by data from the other tips.

Deconvolving tip artifacts using multiple scanning probes

A method for determining the characteristics of a doped semiconductor substrate is disclosed, wherein a scanning probe microscope, preferably an atomic force microscope, is used to move a probe across a sample surface gathering electrical measurements at many locations. The probe tip is conductive and is connected to a control circuit that applies a voltage to the probe and to an electrode fixed to the semiconductor substrate. Preferably, the current that flows through the sample is measured and saved, together with the position of the probe on the surface of the sample. In this manner, the characteristics of the doped sample can be determined at many different locations with many different degrees of doping. The sample is prepared by doping its top surface, then machining off the top surface to provide access to the sample at different doping depths. By driving the probe back and forth across the surface and taking readings of the sample at many different locations, a map of the electrical,characteristics at various doping depths below the top surface can be developed. By using a single scanning probe, that probe can be manufactured to have an extremely small radius of curvature, and hence a much smaller contact spot on the surface of the sample.

Method and apparatus for high resolution profiling in semiconductor structures

A diode is formed at the tip of a pointed portion of a probe of a scanning probe microscope. When the diode is forward biased, the current through the diode varies with the temperature of the diode. The magnitude of the current is an indication of the temperature of the tip of the probe. If the tip is scanned over a surface, a thermal map of the surface can be made and hot spots on the surface located. In some embodiments, the pointed portion of the probe is made of a semiconductor material (for example, silicon). A layer of a metal (for example, platinum) is made to contact the semiconductor material of the pointed portion only at the tip of the pointed portion, thereby forming a very small temperature sensing Schottky diode at the tip of the pointed portion.

Temperature sensing probe for microthermometry

An accurate method of measuring the two-dimensional doping profile of a semiconductor by measuring an electrical parameter along a path of a dopant iso-concentration. Thin vertical or horizontal slices of the semiconductor integrated circuit are provided and are probed to allow the electrical parameter to be measured through a single concentration area.

Growing community of inventors

Santa Barbara, CA, United States of America

Andrew Norman Erickson