University of Pennsylvania

Drexel University

Andrew Marshall Rappe

Jonathan Eli Spanier

Alexie Michelle Kolpak

Ilya Grinberg

Na Sai

Peter K Davies

Robert C Devlin

Don Vincent West

Mitra Lenore Taheri

Alessia Polemi

Steve M Young

Fan Zheng

Liyan Wu

John Mark Martirez

Seungchul Kim

Andrei R Akbasheu

Steven May

Vladimir M Fridkin

James Rondinelli

The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

Photovoltaic cells comprising a layer of crystalline non-centrosymmetric light-absorbing material and a plurality of electrodes to collect ballistic carriers

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

Method for making ferroelectric material thin films

The present invention provides materials with high bulk photovoltaic effect response. The present invention also provides for products comprising the high bulk photovoltaic effect materials of the present invention.

High-performing bulk photovoltaics

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Semiconductor ferroelectric compositions and their use in photovoltaic devices

Provided are systems that comprises an oxygen-metal catalyst, which systems can be used to perform water-splitting or other reactions. The systems can be operated in a photochemical manner.

Synergistic oxygen evolving activity of non-stoichiometric surfaces

A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.

Charge ordered vertical transistors

Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

Ferroelectric ultrathin perovskite films

Disclosed are tunable catalysts and methods of controlling the activity of a catalyst. For example, disclosed are methods of controlling the activity of a catalyst, comprising providing a catalyst, comprising a ferroelectric substrate of finite thickness comprising two opposing surfaces, the ferroelectric substrate being characterized as having a polarization; an electrode surmounting one of the surfaces of the ferroelectric substrate; and a catalytically active material surmounting the surface of the ferroelectric substrate opposing the electrode; and subjecting the ferroelectric substrate to a controllable electric field to give rise to a modulation of the polarization of the ferroelectric substrate, whereby the modulation of the polarization controllably alters the activity of one or more chemical species on the catalytically active material.

Tunable ferroelectric supported catalysts and method and uses thereof

Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.

Growing community of inventors

Penn Valley, PA, United States of America

Andrew Marshall Rappe