International Business Machines Corporation

Globalfoundries Inc.

Adeia Semiconductor Bonding Technologies Inc.

Stmicroelectronics Gmbh

Elpis Technologies Inc.

Andrew Mark Greene

Ruilong Xie

Veeraraghavan S Basker

Balasubramanian Pranatharthiharan

Julien Frougier

John Ryan Sporre

Rajasekhar Venigalla

Kangguo Cheng

Sivananda K Kanakasabapathy

Siva Kanakasabapathy

Ruqiang Bao

Huiming Bu

Dechao Guo

Huimei Zhou

Ekmini Anuja De Silva

Marc Adam Bergendahl

Yao Yao

Peng Xu

Kisup Chung

Gen Tsutsui

Pietro Montanini

Ryan O Jung

Gangadhara Raja Muthinti

Chanro Park

Jingyun Zhang

Injo Ok

Robert Russell Robison

Ravikumar Ramachandran

Michael P Belyansky

Nicolas J Loubet

Reinaldo Ariel Vega

Sanjay C Mehta

Yann Mignot

Eric R Miller

David Lee Rath

Indira P Seshadri

Andrew Gaul

Indira P V Seshadri

Chun-chen Yeh

Qing Liu

Fee Li Lie

Su Chen Fan

Laertis Economikos

Gauri V Karve

Christopher Joseph Waskiewicz

Nicole A Saulnier

Charan V V S Surisetty

Jeffrey C Shearer

Victor W C Chan

Matthew T Shoudy

Alex Joseph Varghese

Dallas M Lea

Alexander Reznicek

Tenko Yamashita

Juntao Li

Junli Wang

Hui Zang

Oleg Gluschenkov

Hong He

Anthony I Chou

Vimal Kumar Kamineni

Charan V Surisetty

Yi Song

Ardasheir Rahman

Adra Carr

Praveen Joseph

Sagarika Mukesh

Sung Dae Suk

Balasubramanian Pranatharthi Haran

Stan Tsai

Effendi Leobandung

Zhenxing Bi

Wenyu Xu

Heng Wu

Kisik Choi

Richard Anthony Conti

Stuart A Sieg

Lan Yu

Miaomiao Wang

Mark V Raymond

Nigel Graeme Cave

Christopher Michael Prindle

Heimanu Niebojewski

Maruf Amin Bhuiyan

Sean Lian

A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers. The gate-all-around field effect transistor device further includes a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer.

Gate-all-around field-effect-transistor with wrap-around-channel inner spacer

Techniques for co-integrating gate-all-around nanosheet devices having bottom dielectric isolation with an ideal vertical P-N-P diode on a common substrate are provided. In one aspect, a semiconductor structure includes: a diode in a first region of a bulk substrate, where the diode includes P-N-P vertical implanted layers present in the bulk substrate, and a single source/drain region epitaxial material disposed on the P-N-P vertical implanted layers; and a nanosheet device with a bottom dielectric isolation layer in a second region of the bulk substrate. The nanosheet device can include nanosheet channels and gates that surround a portion of each of the nanosheet channels in a gate-all-around configuration. A method of fabricating the present semiconductor structures is also provided.

Integration of nanosheets with bottom dielectric isolation and ideal diode

A nanosheet semiconductor device includes channel nanosheets each connected to a source/drain region that has a front surface, a rear surface, and an internal recess between the front surface and the rear surface. The device further includes a source/drain region contact in physical contact with the V shaped internal recess, with the front surface, and with the rear surface. The device may be fabricated by forming the source/drain region, recessing the source/drain region, and by forming a sacrificial source/drain region upon and around the recessed source/drain region. The sacrificial source/drain region may be removed and the source/drain region contact may be formed in place thereof.

Wraparound contact with reduced distance to channel

Semiconductor channel layers vertically aligned and stacked one on top of another, each separated by a gate stack material, a source-drain epitaxy region adjacent to the semiconductor channel layers, a vertical side surface of the source-drain epitaxy region is adjacent to a vertical side surface of a conductive trench contact. A first set and a second set of semiconductor channel layers, a conductive trench contact between them and a source-drain between the first set and the conductive trench contact. Forming a first stack, a second stack and a third stack of nanosheet layers, forming a first, second and third sacrificial gate, forming a first source drain between the first and second stack, forming a second source drain between the second and third, forming a vertical trench in the first source drain while protecting the second source drain, and forming a stressor material layer in the vertical trench.

Strain generation and anchoring in gate-all-around field effect transistors

A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.

Formation of trench silicide source or drain contacts without gate damage

A semiconductor device includes a substrate with a planar top surface. At least a first gate cut stressor within a first gate cut region separates a first transistor region from a second transistor region. The first gate cut stressor is directly upon the planar top surface and applies a first tensile force perpendicular to a channel of the first transistor region and perpendicular to a channel of the second transistor region. The tensile force may improve hole and/or electron mobility within a transistor in the first transistor region and within a transistor in the second transistor region. The gate cut stressor may include a lower material within the gate cut region and an upper material upon the lower material. Alternatively, the gate cut stressor may include a liner material that lines the gate cut region and an inner material upon the liner material.

Stressed material within gate cut region

A semiconductor structure may include one or more nanosheet field-effect transistors formed on a first portion of a substrate, and one or more fin field-effect transistors formed on a second portion of the substrate. A source drain of the one or more nanosheet field-effect transistors or a gate of the one or more nanosheet field-effect transistors may be separated from the substrate by an isolation layer. A source drain of the one or more fin field-effect transistors or a gate of the one or more fin field-effect transistors may be in direct contact with the substrate. The semiconductor structure may include a gate spacer surrounding the gate of the one or more nanosheet field-effect transistors and the gate of the one or more fin field-effect transistors.

Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor

Embodiments are disclosed for a system. The system includes a semiconductor structure. The semiconductor structure includes a dielectric liner that wraps around a top and one side of a substrate island. The dielectric liner separates a substrate from a gate stack. Further, the system includes an access trench in physical contact with the dielectric liner.

Late replacement bottom isolation for nanosheet devices

A semiconductor structure includes a first set of fins and a second set of fins, a dielectric pillar disposed between the first set of fins and the second set of fins, a bottom source/drain (S/D) region directly contacting a bottom surface of the first and second set of fins, and a top S/D region directly contacting a top surface of the first and second set of fins. A high-k metal gate (HKMG) is disposed between fins of the first set of fins and between fins of the second set of fins. The HKMG directly contacts sidewalls of the dielectric pillar. A width of the HKMG between the first set of fins is equal to a width of the HKMG between the second set of fins.

Vertical FET replacement gate formation with variable fin pitch

A stacked device is provided. The stacked device includes a plurality of dielectric support bridges on a substrate, and a first two-dimensional (2D) channel layer on each of the plurality of dielectric support bridges. The stacked device further includes a gate dielectric sheet on the first two-dimensional (2D) channel layer, and a second two-dimensional (2D) channel layer on the first two-dimensional (2D) channel layer. The stacked device further includes a second gate dielectric layer on the gate dielectric sheets.

Stacked planar field effect transistors with 2D material channels

A semiconductor device fabricated by forming FET fins from a layered semiconductor structure. The layered semiconductor structure incudes a sacrificial layer. Further by forming dummy gate structures on the FET fins, recessing the FET fins between dummy gate structures, growing source-drain regions between FET fins and the sacrificial layer, replacing active region dummy gate structures with high-k metal gates structures, and replacing the sacrificial layer with a dielectric isolation material, wherein the dielectric isolation material extends across the active region.

Field effect transistors with bottom dielectric isolation

A semiconductor structure comprises a substrate defining a first axis and a second axis in orthogonal relation to the first axis, first and second nanosheet stacks disposed on the substrate, a gate structure on each of the first and second nanosheet stacks, a source/drain region adjacent each of the first and second nanosheet stacks, a wrap-around contact disposed about each source/drain region and an isolator pillar disposed between the wrap-around contacts.

Wrap-around contact for nanosheet device

Semiconductor structures are disclosed which comprise semiconductor devices having thin multi-layer channel stacks. In one example, a semiconductor structure comprises a gate structure comprising a multi-layer channel stack. The multi-layer channel stack comprises a first dielectric layer, a second dielectric layer, and a channel layer disposed between the first and second dielectric layers. The semiconductor structure further comprises a first source/drain region disposed on a first side of the gate structure and in electrical contact with a first end portion of the multi-layer channel stack and a second source/drain region disposed on a second side of the gate structure and in electrical contact with a second end portion of the multi-layer channel stack.

Semiconductor structure having two-dimensional channel

A semiconductor device includes a semiconductor substrate, a first pair of FET (field effect transistor) gate structures separated by a first gate canyon having a first gate canyon spacing, disposed upon the semiconductor substrate, a second pair of FET gate structures separated by a second gate canyon having a second gate canyon spacing, disposed upon the substrate, a first S/D (source/drain region disposed in the first gate canyon, a second S/D region disposed in the second gate canyon, a first BDI (bottom dielectric isolation) element disposed below the first S/D region and having a first BDI thickness, and a second BDI element disposed below the second S/D region and having a second BDI thickness. The first BDI thickness exceeds the second BDI thickness.

Gate-all-around field effect transistor with bottom dielectric isolation

A method is presented for forming a wrap around contact. The method includes forming a p-type epitaxial region and an n-type epitaxial region over a substrate, forming a dielectric pillar between the p-type epitaxial region and the n-type epitaxial region, depositing sacrificial liners around both the p-type epitaxial region and the n-type epitaxial region, and depositing an inter-layer dielectric (ILD). The method further includes forming trenches in the ILD extending into the sacrificial liners, wherein the trenches are vertically aligned with the p-type epitaxial region and the n-type epitaxial region, removing the sacrificial liners to define irregular-shaped openings exposing the p-type epitaxial region and the n-type epitaxial region, and filling the irregular-shaped openings with a conductive material defining the wrap around contact.

Wrap around contact process margin improvement with early contact cut

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Andrew Mark Greene