Machine Technology, Inc.

Andrew M Hoff

John E Spencer

Richard A Borel

Woodie J Sutton

Scott S Miller

Kenneth E Linxwiler

In semiconductor treatment apparatus with a plasma generating zone, a treatment zone, and a bent path connecting the two so as to block direct transmission of ultraviolet light from the plasma generating zone to the workpiece in the treatment zone, a light trap is provided to suppress indirect transmission of light as by reflection or by transmission within transparent walls of a conduit defining the bent path.

Plasma product treatment apparatus and methods and gas transport systems

A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductive material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i.e., microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode.

Growing community of inventors

State College, PA, United States of America

Andrew M Hoff