University of South Florida

Semiconductor Diagnostics, Inc.

Andrew M Hoff

Mark Jeffrey Jaroszeski

Richard A Gilbert

Richard Jason Connolly

Richard M Heller

Elena I Oborina

Timothy Fawcett

Reginald Morley Atkins

Gabriel A Lopez-Diaz

Douglas Walter Brown

Jacek J Lagowski

Piotr Edelman

Jose I Rey

Lubek Jastrzebski

John Anthony Llewellyn

The present invention provides a system and method for measuring an impedance of one or more target cells before and after an electroporation protocol has been applied to the one or more target cells. The result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize the electrical treatment for a particular target cell or cellular tissue.

Method for electroporation controlled by electrical impedence measurements

The present invention provides a system and a method for measuring an impedance of one or more target cells before and after an electroporation protocol has been applied to the one or more target cells. A result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize an electrical treatment for a particular target cell or cellular tissue.

System and method for electroporation controlled by electrical impedance measurements

In one embodiment, controlling the spatial distribution of an electromagnetic field in a system involves determining an inflection frequency for energy applied to the system below which a first spatial distribution results and above which a second spatial distribution results, selecting an excitation frequency to be used to generate an electromagnetic field to be applied to the system based upon the determined inflection frequency, and applying an electromagnetic field generated using the selected excitation frequency.

Systems and methods for controlling the spatial distribution of an electromagnetic field

A system and method for preventing the undesirable dissipation of charge throughout a tissue surface while maintaining the charge density at a desired tissue treatment site. The invention embodies a physical perimeter conductor positioned in proximity to a tissue surface and a conductance control circuit working in combination to collect surface charge applied within the confines of the perimeter conductor and to maintain a desired relationship between the contained surface charge density and time.

System and method for controlling the surface charge of a region of tissue

Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology, C-KM, that allows the determination and monitoring of interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, Q, onto the dielectric surface followed by determination of the contact potential difference, V, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, V, response related to the applied corona charge. The metrology method presented determines an intersection of the V-Qcharacteristic obtained in the dark with the V-Qcharacteristic representing the dielectric response. The specific V-Qdependence surrounding the reference Vvalue is obtained from this method and allows the noncontact determination of the dielectric interface trap density and its spectrum. Application of embodiments of the subject metrology method to thermal oxide on n-type 4H&#x2014;SiC demonstrates the modification of the Ddistribution by Fowler-Nordheim stress. In addition, an ability to quantify and separate trapped charge components is provided.

Noncontact determination of interface trap density for semiconductor-dielectric interface structures

Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology that allows the determination and monitoring of interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, Q, onto the dielectric surface followed by determination of the contact potential difference, V, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, V, response related to the applied corona charge. An intersection of the V-Qcharacteristic obtained in the dark with the V-Qcharacteristic representing the dielectric response is determined. The specific V-Qdependence surrounding the reference Vvalue is obtained and the dielectric interface trap density and its spectrum is determined. A method and apparatus to quantify and separate trapped charge components is provided.

A method for facilitating a delivery of a molecule into an interior space of a cell includes the steps of introducing a molecule into a biological structure comprising a cell and applying a substantially continuous low-level electric field, in the form of non-thermal plasma (ionized gas) generated by a direct current voltage applied to an electrode, to the molecule and biological structure. The field is applied for a duration sufficient to effect a change in porosity the cell of the biological structure sufficient to facilitate an entry of a desired molecule into an interior thereof.

Method to facilitate directed delivery and electroporation using a charged stream

A device and method to cause hair loss or prevent or inhibit hair growth. The invention uses plasma (ionized gas) that is generated by flowing gas in close proximity to an electrode that has a high potential applied to it. The result is a stream of charged gas particles that are directed to the skin that contains hair. The flowing stream of gas is held above the surface of the skin. Additionally, a grounded conductive material is affixed to the skin to dissipate any charge buildup on the skin and focus the plasma.

Device and method to prevent hair growth

The present invention is a method for electromanipulation of chemical species in vivo relative to a target tissue utilizing a nonconductive, conformable array base adapted to be placed coincident to the target tissue, a plurality of electrode elements projecting from the array base towards the target tissue, the electrode elements addressable individually, an electrical source coupled to the plurality of electrodes, a control means interposed between the electrical source and the plurality of electrode elements and in circuit communication therein, the control means adapted to establish an electrical potential between at least two electrodes, and a delivery means adapted to introduce chemical species to the target tissue.

Electromanipulation method

The present invention is a device for electromanipulation of chemical species in vivo relative to a target tissue including a nonconductive, conformable array base adapted to be placed coincident to the target tissue, a plurality of electrode elements projecting from the array base towards the target tissue, the electrode elements addressable individually, an electrical source coupled to the plurality of electrodes, a control means interposed between the electrical source and the plurality of electrode elements and in circuit communication therein, the control means adapted to establish an electrical potential between at least two electrodes, and a delivery means adapted to introduce chemical species to the target tissue.

Electromanipulation device and method

Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heated, and the contents pressure is controlled. An oxidizing gas is then passed through an afterglow reactor source or microwave cavity where the gas achieves an excited state of energy. When the neutral species of the excited gas contact the silicon carbide substrate within the heated region of the the tube, a thin silicon oxide film forms on the substrate, at a faster rate and lower temperature than has been known. The tube contents are maintained at a temperature between 600&#xb0; C. to 1,200&#xb0; C., and at a pressure less than 50 torr.

Method for making silicon containing dielectric films

A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

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Tampa, FL, United States of America

Andrew M Hoff