Dialog Semiconductor Gmbh

Iwatt Inc.

Andrew Kwok-Cheung Lee

Yong Li

John William Kesterson

Hien Huu Bui

Jiang Chen

Junjie Zheng

Liang Yan

Chuanyang Wang

Jun Zheng

Allan Ming-Lun Lin

Carrie Seim

Fuqiang Shi

Pengju Kong

David H Nguyen

Clarita C Poon

The drive current of the switch in a switching power converter is adjusted dynamically according to line or load conditions within a switching cycle and/or over a plurality of switching cycles. The magnitude of the switch drive current can be dynamically adjusted within a switching cycle and/or over a plurality of switching cycles, in addition to the pulse widths or pulse frequencies of the switch drive current.

Magnitude adjustment of the drive signal of a switching transistor of a switching power converter

A controller of a switching power converter includes a voltage protection circuit that generates a modified supply voltage that does not exceed a predetermined threshold voltage to power one or more components of the controller.

Power system switch protection using output driver regulation

The embodiments herein describe a switched mode power converter. In particular, the embodiments herein disclose techniques for reducing power consumption of a synchronous rectifier controller of the switched mode power converter. The switched mode power converter includes a plurality of circuit components that control operation of a synchronous rectifier included in the switched mode power converter. One or more of the circuit components may be disabled to reduce power consumption.

Reducing power consumption of a synchronous rectifier controller

The embodiments herein describe a dynamic metal-oxide-semiconductor field-effect transistor (MOSFET) gate driver system architecture and control scheme. The MOSFET gate driver system dynamically adjusts both the gate driver turn-on-resistance and the gate driver turn-off resistance within a single (i.e., one) switching cycle to reduce electromagnetic interference (EMI) in the system and to minimize the conduction loss of a power MOSFET during operation.

Dynamic MOSFET gate drivers

A power converter that controls a collector current of a bipolar junction transistor (BJT) by controlling the base current to the BJT after having determined the gain of the BJT. A gain detection block determines a gain of the BJT during a first mode. A current calculation block generates a current setting for the base current based on the gain of the BJT determined by the gain detection block during a second mode distinct from the first mode. In some embodiments, the power converter may be included in a LED lamp system.

Adaptive bipolar junction transistor gain detection

The embodiments disclosed herein describe the dynamic control of a switching power converter between different operation modes of the switching power converter. In one embodiment, the operation modes of the switching power converter include a switching mode and a linear mode. The switching power converter may be included in a LED lamp system according to one embodiment.

Dynamic control of power switching bipolar junction transistor

A switching power converter comprises a transformer (), a switch () coupled to the transformer (), and a switch controller () coupled to the switch () for generating a switch drive signal () to turn on or off the switch (). The drive current of the switch drive signal () is adjusted dynamically according to line or load conditions within a switching cycle and/or over a plurality of switching cycles. The magnitude of the drive current can be dynamically adjusted within a switching cycle and/or over a plurality of switching cycles, in addition to the pulse widths or pulse frequencies of the drive current.

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Union City, CA, United States of America

Andrew Kwok-Cheung Lee