Macom Technology Solutions Holdings, Inc.

M/a -com, Inc.

Andrew K Freeston

Timothy Edward Boles

Paul John Schwab

Costas D Varmazis

Jack Redus

A method for fabricating a transistor and the resulting transistor is disclosed. The method generally includes steps (A) to (E). Step (A) may form a high mobility layer. The high mobility layer is generally configured to carry a two-dimensional electron gas. Step (B) may form a planar layer on the high mobility layer. Step (C) may form a barrier layer on the planar layer. Step (D) may form a doped layer on the barrier layer. The doped layer is generally a low bandgap III-V semiconductor. Step (E) may form a gate in contact with the doped layer. The gate may be separated from both a source and a drain by corresponding ungated recess regions. The high mobility layer, the planar layer, the barrier layer, the doped layer, the source, the gate and the drain are generally configured as a pseudomorphic high electron mobility transistor.

Structure of a pHEMT transistor capable of nanosecond switching

A control circuit and a conversion circuit. The control circuit may be configured to generate an analog control signal in response to a digital control signal. The conversion circuit may be configured to generate a capacitance signal in response to the analog control signal.

Digitally controlled high Q factor capacitor

A serial controller for use in controlling various radio frequency (RF) modules within an RF integrated circuit is disclosed. The serial controller is coupled to an serial bus that internal to the RFIC that transmits commands and data from a microcontroller to a data receiver module within the serial controller. The serial commands and data are transmitted across the serial bus in a data packet format having an address-overhead portion and a data portion, wherein the data receiver module removes the address-overhead bits from the packet and provides the data portion of the packet as output data. A decoder/coder logic module coupled to the data receiver receives the serial data and is operative to process the serial data and in response thereto activate one or more control signals. An RF module includes at least one circuit and one or more switching elements that are coupled to the one or more control signals. The switching elements are responsive to the corresponding control signals by switching one or more switchable component into the circuit or isolating the switchable component from the circuit to adjust or change one or more parameter of the circuit so as to vary the output of the RF module in a controlled manner.

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Windham, NH, United States of America

Andrew K Freeston