The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland

Andrew John Simons

Leigh Trevor Canham

Timothy Ingram Cox

Armando Loni

Richard Simon Blacker

An electroluminescent device ( ) comprises a porous silicon region ( ) adjacent a bulk silicon region ( ), together with a top electrical contact ( ) of transparent indium tin oxide and a bottom electrical contact ( ) of aluminum. The device includes a heavily doped region ( ) to provide an ohmic contact. The porous silicon region ( ) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device ( ) has a rectifying p-n junction within the porous silicon region ( ).

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Malvern, United Kingdom

Andrew John Simons