International Business Machines Corporation

Other

Globalfoundries Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Andrew John Kellock

Hariklia Deligianni

Eugene John O'Sullivan

Lubomyr Taras Romankiw

Naigang Wang

William Joseph Gallagher

John Edward Eric Baglin

Cyril Cabral, Jr

Stephen Mark Rossnagel

Kailash Gopalakrishnan

Emanuel Israel Cooper

Dieter Klaus Weller

Bruce David Terris

Timothy C Reiley

Donald Stimson Bethune

Rohit Sudhir Shenoy

Judith Marie Rubino

Linden James Crawforth

Stefanie Ruth Chiras

Liesl Folks

Richard Dale Bunch

Eric Wayne Flint

Roger Y Tsai

Christian Lavoie

Bin Yang

Zhen Zhang

Yu Zhu

Ahmet Serkan Ozcan

Koichi R Wago

Qiang Huang

Xiaoyan Shao

Mark Whitney Hart

Kumar R Virwani

Venkatram Venkatasamy

Hyungjun Kim

Stefan Zollner

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

High resistivity soft magnetic material for miniaturized power converter

A device has a MXYlayer in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Another device has MXYmaterial contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.

Backend of line (BEOL) compatible high current density access device for high density arrays of electronic components

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5&#xd7;10A/cm. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.

Low temperature BEOL compatible diode having high voltage margins for use in large arrays of electronic components

A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.

Silicide contact formation

A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.

Method of electrodepositing germanium compound materials on a substrate

Modified strain regions are created in correlation to strain reactive structures that are subjected to a predetermined dimensional precision adjustment. The modified strain regions are created by impacting incident particles into exposed regions of the strain reactive structures. The irradiation by the incident particles creates a predetermined material disruption and consequently a change in strain energy. The strain energy, and the associated dimensional adjustment is dependent on the irradiation process and the sum properties of the modified strain regions and the strain reactive structure.

Particle irradiation method for modification of local strain in strain reactive structures

A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

Electroplated CoWP composite structures as copper barrier layers

A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.

Plasma enhanced ALD of tantalum nitride and bilayer

At least one modified strain region having a damage depth between 0.1 and 2 microns in a disk drive slider is created by implantation with ions, electrons or neutral atoms. The modified strain region induces a deformation of the disk drive slider. The nature and extent of this deformation is determined by the interaction between the slider and the modified strain region.

Modified strain region of strain reactive slider with implanted ions, electrons or neutral atoms

A method for making a patterned magnetic recording disk uses patterned ion implantation of the disk substrate. Energetic ions, such as He, N or Ar ions, are directed to the disk substrate through a mask, preferably a non-contact mask. They are implanted into the substrate, and the process causes localized topographic distortions in the substrate surface. A magnetic layer is then deposited over the substrate in the conventional manner, such as by sputtering. The result is a disk with patterned magnetic regions that are raised above the substrate surface. Because these regions are elevated, they are closer to the recording head in the disk drive and can thus be individually recorded to form discrete magnetic bits. Depending on the type of substrate used, the ion implantation can cause either localized swelling to form pillars or localized compaction to form pits. The patches of magnetic material on the tops of the pillars, or on the substrate surface between the pits, form the discrete magnetic bits.

Patterned magnetic recording disk with substrate patterned by ion implantation

A patterned magnetic recording disk, i.e., a disk with discrete magnetically recordable regions that can function as discrete magnetic bits, is formed by ion irradiating a continuous magnetic film of a chemically-ordered alloy having a tetragonal crystalline structure through a patterned non-contact mask. The ions cause disordering in the film and produce regions in the film that have no magnetocrystalline anisotropy. The regions of the film not impacted by the ions retain their chemical ordering and magnetocrystalline anisotropy and thus serve as the discrete magnetic regions that can be recorded as individual magnetic bits. The chemically-ordered alloy is preferably Co (or Fe) and Pt (or Pd) with the c-axis of the tetragonal crystalline film oriented at an angle less than 45 degrees relative to the plane of the film, so that after patterning the discrete magnetic regions can be recorded by horizontal magnetic recording.

Patterned magnetic recording media containing chemically-ordered FePt of CoPt

Growing community of inventors

Sunnyvale, CA, United States of America

Andrew John Kellock