Seagate Technology Incorporated

Andrew James Wirebaugh

Wei Tian

Nurul Amin

Insik Jin

Ming Sun

Venugopalan Vaithyanathan

Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Growing community of inventors

Hopkins, MN, United States of America

Andrew James Wirebaugh