Xerox Corporation

Other

Andrew J Moore

Robert Anthony Street

Ping Mei

Raj B Apte

Steven E Ready

James B Boyce

Franklin Mark Schellenberg

Design-based reticle inspection allows for a more efficient prioritization than typical human labor intensive reticle inspection techniques. A processed netlist for an integrated circuit (IC) and/or layout of the IC is used to determine the relative priorities of reticle defects identified by a reticle inspection device. In one embodiment, the processed netlist is a netlist that is derived by a verification tool based on a layout of the IC design. The processed netlist can include component coordinates that indicate the position of the components of the IC. In one embodiment, the processed layout includes derived geometry, for example, critical dimensions and/or device identifications that can be used to determine regions of interest. In one embodiment, defects are prioritized based on the location of the defects with respect to functional portions of the integrated circuit. For example, regions of interest can be determined around certain IC structures (e.g., transistor gates, minimum dimension lines, line corners). In one embodiment, defects within the regions of interest can be repaired while defects outside of the care zone can be ignored. More complex defect prioritization can be provided by prioritizing defects, for example, by size within the regions of interest. By prioritizing defects by areas of interest, the number of defects analyzed by a human operator and/or simulator can be decreased thereby decreasing the cost of reticle inspection and repair.

Design-based reticle defect prioritization

A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.

Hybrid sensor pixel architecture with gate line and drive line synchronization

A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.

Hybrid sensor pixel architecture with threshold response

A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.

Hybrid sensor pixel architecture

A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Linearization of output response is provided.

Growing community of inventors

Dallas, OR, United States of America

Andrew J Moore