USA as Represented by Secretary of the Navy

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Andrew J Boudreau

Michael K Yetzbacher

Bernard F Phlips

Marc Christophersen

Christopher W Miller

Michael J Deprenger

A method of calibrating a topography metrology instrument using a calibration reference, which includes a substrate and a plurality of bi-layer stacks. Each bi-layer stack includes a plurality of bi-layer steps. At least one bi-layer step of the plurality of bi-layer steps includes two materials. The at least one bi-layer step of the plurality of bi-layer steps includes an etch stop layer and a bulk layer. The calibration reference includes a calibration reference step profile includes a plurality of predetermined bi-layer stack heights. The calibration reference step profile and the predetermined bi-layer stack heights are measured using a topography metrology instrument. The topography metrology instrument is calibrated based on the measured calibration reference step profile and the measured bi-layer stack heights.

Method of calibrating a nanometrology instrument

A method of optical spectroscopy and a device for use in optical spectroscopy. The device includes a substrate, and a plurality of etalon cavities affixed to or coupled to the substrate. A signal is received from a Fabry-Perot interferometer. The signal is sampled using the device according to a generalized Nyquist-Shannon sampling criterion. The signal is sampled using the device according to a phase differential criterion for wave number resolution. An input spectrum for the signal is reconstructed based on the signal sampled according to the generalized Nyquist-Shannon sampling criterion and the signal sampled according to the phase differential criterion for wave number resolution.

Method and apparatus for multiplexed Fabry-Perot spectroscopy

Method and apparatus for multiplexed fabry-perot spectroscopy

A ramped etalon cavity structure and a method of fabricating same. A bi-layer stack is deposited on a substrate. The bi-layer stack includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch stop layer and a bulk layer. A three dimensional photoresist structure is formed by using gray-tone lithography. The three dimensional photoresist is plasma etched into the bi-layer stack, thereby generating an etched bi-layer stack. The etched bi-layer stack is chemically etched with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.

Nanometer-scale level structures and fabrication method for digital etching of nanometer-scale level structures

The present invention relates to a device that provides privacy to a display. The invention works in conjunction with devices that are capable of being used in public. The display is typically part of an electronic apparatus, such as a laptop computer, portable DVD player, gaming machine and the like. The invention device includes at least a top panel and two side panels. The invention device also includes a gap bridging mechanism, which can be embodied in a variety of structures. The gap bridging mechanism bridges any gap formed between one or both side panels and the top panel resulting from the lateral or horizontal adjustment of these panels.

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Washington, DC, United States of America

Andrew J Boudreau