Hitachi, Ltd.

Andrew Irvine

Tomas Jungwirth

David Arfon Williams

Joerg Wunderlich

Bryan Gallagher

Jörg Wunderlich

Andrew Ferguson

Jairo Sinova

Chiara Ciccarelli

Fernando Gonzalez Zalba

A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarized charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Spin-polarised charge-carrier device

A single-electron transistor () has an elongate conductive channel () and a side gate () formed in a 5 nm-thick layer () of GaMnAs. The single-electron transistor () is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.

Single-charge tunnelling device

Growing community of inventors

Swavesey, United Kingdom

Andrew Irvine