Itt Corporation

Andrew H Peake

Robert A Sadler

Dain Curtis Miller

An improved substantially planar and easy to manufacture field-effect-transistor (FET) includes a guard region between an n.sup.+ drain region and the remainder of the device, which enables the breakdown voltage of the FET to be substantially increased under open-channel conditions without adversely impacting other important device characteristics.

Planar ion-implanted GaAs MESFETS with improved open-channel burnout

An improved substantially planar and easy to manufacture field-effect-transistor (FET) includes a guard region between an n+ drain region and the remainder of the device, which enables the breakdown voltage of the FET to be substantially increased under open-channel conditions without adversely impacting other important device characteristics.

Growing community of inventors

Roanoke, VA, United States of America

Andrew H Peake