Saint-gobain Ceramics & Plastics, Inc.

Cabot Microelectronics Corporation

Saint-gobain Cermaics & Plastics, Inc.

Coorstek, Inc.

Andrew G Haerle

Jun Wang

Ronald W Laconto

Gerald S Meder

Richard F Buckley

Richard R Hengst

Edward A Perry

Frederic Wiss

Doruk Omer Yener

Ralph Bauer

Michael D Kavanaugh

Ke Zhang

Hon Wu Lau

Dominique Dubots

Claire M Theron

Lu Tian

Han C Chang

Claire Theron

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.

Chemical-mechanical processing slurry and methods

A polishing slurry can include zirconia particles. The polishing slurry can be used to polish conductive and insulating materials, and is particularly well suited for polishing oxide materials as well as metals. The characteristics of the zirconia particles can affect the polishing of workpieces. By selecting the proper characteristics, the polishing slurry can have a good material removal rate while still providing an acceptable surface finish. The zirconia particles can be used as a replacement for, or in conjunction with, ceria or other abrasive particles. The content of zirconia particles in the polishing slurry may be less than a comparable polishing slurry having silica or alumina particles.

Polishing slurry including zirconia particles and a method of using the polishing slurry

A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 &#x212b;/min to achieve a Ra of not greater than about 5.0 &#x212b;. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt % water.

Chemical mechanical planarization using nanodiamond

An abrasive particulate material is disclosed that includes alumina particles. The alumina particles include a transition alumina and at least 5.0 wt % of an amorphous phase. The transition alumina particles also have a density not greater than about 3.20 g/cm.

Abrasive particulate material, and method of planarizing a workpiece using the abrasive particulate material

Processes for forming ceramic particulate material. The ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m/g and not greater than 75 m/g and a sphericity quantified by at least one of (i) a mean roundness not less than 0.710 as measured by Roundness Correlation Image Analysis, and (ii) a concavity less than 20%, wherein concavity is the percent of alumina particles based on a sample of at least 100 particles, which have a concave outer peripheral portion that extends along a distance not less than 10% of dby TEM inspection, the concave outer peripheral portion having a negative radius of curvature as viewed from an interior of the particle.

Ceramic particulate material and processes for forming same

A particulate material comprising cerium oxide particles having a secondary particle size distribution in a range of 80 nm to 199 nm and a density of at least 6.6 g/cm.

Ceria material and method of forming same

A polishing slurry includes liquid medium and particulate abrasive. The particulate abrasive includes soft abrasive particles, hard abrasive particles, and colloidal silica particles, wherein the soft abrasive particles have a Mohs hardness of not greater than 8 and the hard abrasive particles have a Mohs hardness of not less than 8, and wherein the soft abrasive particles and the hard abrasive particles are present at a weight ratio of not less than 2:1.

Polishing slurries

A recrystallized silicon carbide body is provided that has a resistivity of not less than about 15 &#x3a9; cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.

High resistivity silicon carbide

A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.

Method for treating semiconductor processing components and components formed thereby

A method of forming a component is disclosed. The method includes: providing a core containing a porous material; infiltrating the core with silicon carbide; and removing the porous material of the core, thereby forming a porous substrate containing silicon carbide.

Methods for forming high purity components and components formed thereby

A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Growing community of inventors

Northboro, MA, United States of America

Andrew G Haerle