Koninklijke Philips Corporation N.v.

Cambridge Enterprise Limited

Nokia Corporation

Universidad Politécnica De Madrid

Cambridge Enterprise Limited & University of Bolton

Nokia Technologies Oy

University of Bolton

Andrew Flewitt

Asta Maria Karkkainen

Timothy J Mellow

Girish Rughoobur

Tim John Mellow

William Milne

Luis Garcia-Gancedo

Mario De Miguel-Ramos

Jack Luo

Ewelina Wajs

Enrique Iborra

Teona Mirea

Asta Kärkkäinen

Gregory Ashley-James

A resonator is disclosed for the detection of a mass analyte, such as a biological analyte. The resonator has: a piezoelectric layer formed of a piezoelectric material; a first resonator region and a second resonator region each occupying a corresponding region of the piezoelectric layer; electrodes disposed to apply a driving signal to the piezoelectric layer to generate bulk acoustic waves, the electrodes being common to the first resonator region and the second resonator region. In operation, the first resonator region has a first resonant frequency and the second resonator region has a second resonant frequency. The first resonator region and the second resonator region differ from each other in that the first resonator region is adapted to receive a mass analyte for the mass analyte selectively to attach to a surface of the first resonator region. In operation, attachment of the mass analyte selectively at the first resonator region causes a greater frequency shift in the first resonant frequency than in the second resonant frequency. Also disclosed is a corresponding method for the detection of a mass analyte.

Resonator for the detection of a mass analyte and method for operation of the resonator

Disclosed is a method of sensing a target analyte in a liquid sample using a bulk acoustic wave resonator device. The liquid sample is placed on the bulk acoustic wave resonator device which is operated to generate bulk acoustic waves. A shift in the fundamental resonant frequency of the bulk acoustic wave resonator device is measured. The bulk acoustic wave resonator device comprises a resonator structure and an acoustic decoupling layer. The resonator structure comprises: a piezoelectric material layer; electrodes arranged to apply a driving signal to the piezoelectric material layer to generate bulk acoustic waves; and a resonator structure surface. The acoustic decoupling layer is formed over the resonator structure surface. The acoustic decoupling layer acoustic impedance is: up to &#x2155; times or not less than 5 times the resonator structure acoustic impedance, and up to &#x2155; times or not less than 5 times the liquid sample acoustic impedance.

Method for operation of resonator

Provided is a method for measurement of a change in environment at a sensor. The sensor has: a first layer formed of a piezoelectric material; a second layer formed adjacent the first layer and acoustically coupled with the first layer; and electrodes disposed to apply a driving signal to the first layer to generate bulk acoustic waves. The temperature coefficient of frequency of the first layer is different to that of the second layer. In the method, a first layer resonant frequency associated with the first layer and a combination resonant frequency associated with a combination of the first and second layers are detected. A shift in one or both of the first layer resonant frequency and the combination resonant frequency is detected. A portion of the shift caused by a temperature change at the sensor is identified. Another portion of the shift caused by an environmental change at the sensor other than the temperature change is identified. Also provided is a corresponding sensor and sensor system operable to carry out the method.

Measurement method using a sensor; sensor system and sensor

Apparatus for compensating for pressure changes in an acoustic transducer system includes a skeleton member having a predetermined configuration and adsorbent material having a regular structure and being supported on the skeleton member. The apparatus may include a plurality of members, each of the plurality of members having a plurality of hollows formed therein, at least one main surface of each of the plurality of members substantially facing and spaced apart from a main surface of an adjacent one of the plurality of members, and the adsorbent material may be provided within each of the plurality of hollows.

Apparatus incorporating an adsorbent material, and methods of making same

A method of manufacturing a bottom gate transistor comprises depositing a first microcrystalline silicon layer ( ) over the gate insulator layer ( ) and exposing the microcrystalline silicon layer to a nitrogen plasma ( ), thereby forming silicon nitride with a crystalline structure. A plurality of microcrystalline silicon nitride layers are formed in this way. A further microcrystalline silicon layer is deposited over the exposed layers defining the semiconductor body ( ) of the transistor. This method enables the bottom of the transistor body to have a microcrystalline structure, improving the mobility of the semiconductor layer, even at the interface with the gate insulator layer. The exposed silicon nitride layers become part of the gate insulator layer, and there is improved structural matching between the gate insulator layer and the semiconductor transistor body, which layers derive from the same microcrystalline silicon structure.

Thin film transistors and their manufacture

In a method of manufacturing a transistor, a gate conductor is defined over an insulating substrate. A gate insulator layer is formed over the gate conductor. A first microcrystalline silicon layer is deposited over the gate insulator layer and is exposed to nitrogen plasma, thereby forming silicon nitride and substantially maintaining the crystalline structure. Successive layers are similarly deposited and then exposed to nitrogen plasma, forming multiple microcrystalline silicon layers. A further microcrystalline silicon layer is formed over the exposed layers, defining the semiconductor body of the transistor. A source and drain structure are defined over the transistor body.

Manufacture of thin film transistors

Growing community of inventors

Cambridge, United Kingdom

Andrew Flewitt