Soraa, Inc.

Soraa Laser Diode, Inc.

Korrus, Inc.

Sorra, Inc.

Andrew Felker

Rajat Sharma

William D Houck, Ii

Nicholas Andrew Vickers

James W Raring

Aurelien J F David

Mathew C Schmidt

Rafael Ignacio Aldaz

Thomas M Katona

Max Batres

Nicholas J Pfister

Kenneth John Thomson

Aurelien Jf David

David Press

Rafael L Aldaz

A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices

Array of triangular semiconductor dies

Triangular semiconductor die

Array of triangular semiconductor dice

Diamond-shaped semiconductor die

A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material

A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.

Method for manufacture of bright GaN LEDs using a selective removal process

A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.

Techniques of forming ohmic contacts on GaN light emitting diodes

A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

Singulation method and resulting device of thick gallium and nitrogen containing substrates

Techniques of forming Ohmic contacts on GaN light emitting diodes

Growing community of inventors

Fremont, CA, United States of America

Andrew Felker