Electro Scientific Industries, Inc.

Andrew Edwin Hooper

Kelly Bruland

Xiaoyuan Peng

Daragh Finn

Yunlong Sun

Brian W Baird

David Barsic

Yasu Osako

William J Jordens

Clint R Vandergiessen

Robert Hainsey

Steve Swaringen

Lynn Sheehan

A Grey Lerner

Jim Dumestre

Bong H Cho

Brian L Pugh

An etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. An estimated etch time duration is determined for removing the amount of the material upon exposing the silicon workpiece to the spontaneous etchant for the estimated etch time duration. In some embodiments, the system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.

Silicon etching control method and system

Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes

Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.

Methods and systems for dynamically generating tailored laser pulses

Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. At least one of the predefined temporal pulse profiles may be triangular. The target class may include, for example unpassivated electrically conductive links or other bare metal structures. Based on the target class associated with the selected target, a laser pulse is generated having a triangular temporal pulse profile. The generated laser pulse is used to process the selected structure.

Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes

A laser processing system provides a burst of ultrafast laser pulses having a selectively shaped burst envelope. A burst pulse laser includes a high repetition rate ultrafast laser to deliver a pulse train with each pulse in the train having an independently controlled amplitude. The respective amplitudes of each ultrafast pulse in a group define a 'burst envelope.' In addition to independently controlling the amplitude of each ultrafast pulse within the burst envelope, the system may also provide selective control of spacing between each ultrafast pulse and/or the overall temporal width of the burst envelope. Thus, the system provides selective shaping of the burst envelope for particular laser processing applications.

Pulse temporal programmable ultrafast burst mode laser for micromachining

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Portland, OR, United States of America

Andrew Edwin Hooper