Ii-vi Advanced Materials, LLC

Andrew E Souzis

Varatharajan Rengarajan

Gary E Ruland

Ilya Zwieback

An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cmat a wavelength between about 400 nm to about 800 nm.

Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same

The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cmat a wavelength in a range between about 400 nm to about 800 nm.

Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material

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Ramsey, NJ, United States of America

Andrew E Souzis