Ucl Business Plc

Andrew David Lee

Alwyn John Seeds

Huiyun Liu

A semiconductor device comprising a silicon substrate on which is grown a &#x3c;100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

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London, United Kingdom

Andrew David Lee