Asml Netherlands B.v.

Andrew David LaForge

Yue Ma

Igor Vladimirovich Fomenkov

Klaus Martin Hummler

Alexander Igorevich Ershov

Chunguang Xia

John Tom Stewart, Iv

Dzmitry Labetski

John Tom Stewart

Christianus Wilhelmus Johannes Berendsen

Henricus Gerardus Tegenbosch

Marc Guy Langlois

Kornelis Frits Feenstra

Kerim Nadir

Arun Johnkadaksham

Matthias Kraushaar

Maksim Loginov

Seyedmohammad Mojab

Rui Miguel Duarte Rodrigues Nunes

Alexander Shatalov

Martinus Hendrikus Antonius Leenders

Johannes Hubertus Josephina Moors

Johannes Henricus Wilhelmus Jacobs

Robert Jay Rafac

Jan Steven Christiaan Westerlaken

Fei Liu

Yezheng Tao

Jonghoon Baek

Antonius Theodorus Wilhelmus Kempen

Alexander Anthony Schafgans

David Robert Evans

William Peter Van Drent

Alexey Sergeevich Kuznetsov

Peter Gerardus Jonkers

Daniel Brown

Jason Michael Arcand

Hendrikus Alphonsus Ludovicus Van Dijck

Jeroen Hubert Rommers

Parham Yaghoobi

Hubertus Johannes Van De Wiel

Jordan Jur

Elena Nedanovska

Celal Korkmaz

Deniz Van Heijnsbergen

Alexander Downn Kim

Qiushi Zhu

Fernando Brizuela

Rob Carlo Wieggers

Umesh Prasad Gomes

Marcus Adrianus Van De Kerkhof

Nina Vladimirovna Dziomkina

Daniel John William Brown

Michael Anthony Purvis

Rui Miguel Duarte Rodreigues Nunes

Kay Hoffmann

Peter Matthew Mayer

Rui Miguel Duarte Rodriges Nunes

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

Guiding device and associated system

Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

Oxygen-loss resistant top coating for optical elements

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Cleaning a structure surface in an EUV chamber

Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.

Apparatus for and method of reducing contamination from source material in an EUV light source

Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Prolonging optical element lifetime in an EUV lithography system

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber () containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

A first target is provided to an interior of a vacuum chamber, a first light beam is directed toward the first target to form a first plasma from target material of the first target, the first plasma being associated with a directional flux of particles and radiation emitted from the first target along a first emission direction, the first emission direction being determined by a position of the first target; a second target is provided to the interior of the vacuum chamber; and a second light beam is directed toward the second target to form a second plasma from target material of the second target, the second plasma being associated with a directional flux of particles and radiation emitted from the second target along a second emission direction, the second emission direction being determined by a position of the second target, the first and second emission directions being different.

Reducing the effect of plasma on an object in an extreme ultraviolet light source

An initial pulse of radiation is generated; a section of the initial pulse of radiation is extracted to form a modified pulse of radiation, the modified pulse of radiation including a first portion and a second portion, the first portion being temporally connected to the second portion, and the first portion having a maximum energy that is less than a maximum energy of the second portion; the first portion of the modified pulse of radiation is interacted with a target material to form a modified target; and the second portion of the modified pulse of radiation is interacted with the modified target to generate plasma that emits extreme ultraviolet (EUV) light.

Extreme ultraviolet light source

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Poway, CA, United States of America

Andrew David LaForge