Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Applied Materials, Inc.

Soitec

Aspect Systems Inc.

Andrew David Johnson

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Eugene Joseph Karwacki, Jr

Manchao Xiao

Anupama Mallikarjunan

David Charles Winchester

Xinjian Lei

Robert Gordon Ridgeway

Jianheng Li

John Giles Langan

Stephen Andrew Motika

Peter James Maroulis

Christopher Michael Albright

Hoshang Subawalla

Richard Vincent Pearce

Vasil Vorsa

Matthew John Bosco

Michael Albert Tischler

Timothy Christopher Golden

Chantal Arena

Steve G Ghanayem

Christiaan J Werkhoven

Wayne Thomas McDermott

Bing Han

Alexander Schwarz

Jeffrey Raymond Hufton

Philip Bruce Henderson

Meiliang Wang

Aaron Scott Lukas

Dingjun Wu

John B Dickenson

Thomas Stephen Farris

Heather Regina Bowen

Ronald Thomas Bertram, Jr

Laura M Matz

Gregory Khosrov Arslanian

Ravi Rajagopalan

Douglas Paul Dee

Bing Ji

Christopher Robert Cording

Stephen M Fine

Richard Linton Samsal

Glenn Michael Mitchell

Steven Arthur Rogers

Alexander David Glew

Patrick Timothy Hurley

Charles Anthony Schneider

Martin Jay Plishka

Michael T Savo

Isaac Patrick West

Mark Ian Sistern

Mario Joseph Moniz

Richard R Bodette

Herbert David Johnson

Timothy Wayne McGaughey

Gerald W Klein

Jr Eugene Joseph Karwacki

Issac Patrick West

Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cmor greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25&#xb0; C. to about 400&#xb0; C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

Compositions and methods for making silicon containing films

Xenon is contained within articles of manufacture such as light bulbs. Described herein are an apparatus, system, a method to capture and collect the xenon contained in articles of manufacture such as defective light bulbs for recovery and/or reuse.

System and method for xenon recovery

Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350&#xb0; C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cmor greater; a hydrogen content of about 4&#xd7;10cmor less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

Barrier materials for display devices

Process gas(es), such as but not limited to helium, can be used in the manufacture of a variety of objects. Described herein are methods to collect, reuse, and recycle the process gas(es) that are used in the production process rather than treat these materials as waste.

System and method for gas recovery and reuse

Methods for forming non-oxygen containing silicon-based films, that contain &#x3e;50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiHgroups with at least one Clinkage between silicon atoms such as 1,4-disilabutane.

Methods of forming non-oxygen containing silicon-based films

A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SiCNHF, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.

Antireflective coatings for photovoltaic applications

A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;

Dielectric barrier deposition using nitrogen containing precursor

An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.

Method and equipment for selectively collecting process effluent

The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RRN]SiR(R), where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, Rand Rcan be hydrogen, Cto Calkane, alkene, or Cto Caromatic; each Ris a vinyl, allyl or vinyl-containing functional group.

Amino vinylsilane precursors for stressed SiN films

The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of Nfrom the adsorbent vessel and void space, the recovered Xe is not diluted by Ncontained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.

Recovering of xenon by adsorption process

A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.

UV absorption based monitor and control of chloride gas stream

A process for selectively etching a material comprising SiOover silicon, the method comprising the steps of: placing a silicon substrate comprising a layer of a material comprising SiOwithin a reactor chamber equipped with an energy source; creating a vacuum within the chamber; introducing into the reactor chamber a reactive gas mixture comprising a fluorine compound, a polymerizable fluorocarbon, and an inert gas, wherein the reactive gas mixture is substantially free of added oxygen; activating the energy source to form a plasma activated reactive etching gas mixture within the chamber; and selectively etching the material comprising SiOpreferentially to the silicon substrate.

Selective etching of silicon dioxide compositions

This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeFby reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F, NF, CF, CF, CF, SF, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

Selective etching and formation of xenon difluoride

A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

Method for removing carbon-containing residues from a substrate

A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas, optionally an oxygen-containing gas, and optionally an additive gas; activating the process gas in a remote chamber using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the organic electroluminescent residue from the surface.

Method for removing organic electroluminescent residues from a substrate

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Doylestown, PA, United States of America

Andrew David Johnson