Analog Devices,inc.

Andrew David Bain

William Allan Lane

Bernard Patrick Stenson

Paul Malachy Daly

Derek F Bowers

Patrick Martin McGuinness

Anne Maria Deignan

Michael Thomas Dunbar

Edward John Coyne

David J Clarke

Patrick Martin McGuiness

Paul Martin Lambkin

Seamus Paul Whiston

Patrick Martin Mcguinness

Derek Frederick Bowers

An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.

Electrostatic protection device

A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Junction field effect transistor with region of reduced doping

A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

Junction field effect transistor

A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Bipolar transistor with guard region

Bipolar transistor

A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

Methods of forming a bipolar transistor

The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element. The cap includes a diffractive optical element and an aperture stop which collectively determine the wavelength of incident radiation that is allowed through the cap and onto the at least one optical element.

Radiation sensor with cap and optical elements

A method for forming an LDNMOS ( ) and LDPMOS ( ) in a CMOS process comprises forming the LDNMOS ( ) and LDPMOS ( ) to a stage where a gate ( ) is laid down on a gate oxide layer ( ) and a locos ( ) is formed over the respective N and P-wells ( ) and ( ) of the LDNMOS ( ) and LDPMOS ( ). A P-body ( ) is formed in the N-well ( ) of the LDNMOS ( ) by implanting a boron dopant in two stages, in the first stage at a first tilt angle (&thgr;) of 45&deg; for forming the P-body ( ) beneath the gate ( ) for determining the source/drain threshold voltage, and subsequently at a second tilt angle (&phgr;) of 7&deg; for extending the P-body ( ) downwardly at ( ) for determining the punchthrough breakdown voltage of the LDNMOS ( ). The formation of an N-body ( ) in a P-well ( ) of the LDPMOS ( ) is similar to the formation of the P-body ( ) with the exception that the dopant is a phosphorous dopant.

Growing community of inventors

Limerick, Ireland

Andrew David Bain