Attollo Engineering, LLC

Flir Systems, Incorporated

Teledyne Scientific and Imaging, LLC

Aspire Precision Instruments, LLC

Andrew D Hood

Jonathan Charles Geske

Michael MacDougal

William E Tennant

Edward K Huang

Allan Evans

Richard E Bornfreund

Bryan Gall

Paula Heu

A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

PIN photodetector

A hybridized image sensor includes a first die and a second die. The first die includes a first surface, a first plurality of conductive bumps fabricated on the first surface, and a first alignment feature fabricated on the first surface. The second die includes a second surface, a second plurality of conductive bumps fabricated on the second surface, and second alignment features fabricated on the second surface, wherein the first alignment features interact with the second alignment features to align the first plurality of conductive bumps with the second plurality of conductive bumps.

Alignment features for hybridized image sensor

A device and method for an amplitude modulated optical pickup for a stringed instrument are disclosed. A first optical source comprising a first output signal comprising a first carrier frequency is provided and a first photodetector is in optical communication with the first optical source. A vibrating element such as a string on a musical instrument is disposed in an optical path between the first optical source and the first photodetector whereby a vibration of the element varies and modulates an amplitude of the first output signal received by the photodetector that is proportional to an element vibration amplitude and is at the same frequency as the element vibration frequency. An amplitude modulated (AM) photodetector signal output is generated from the first photodetector. The resultant signal is then demodulated with appropriate circuitry to produce a substantially noise free electronic signal representative of the element vibration frequency.

Device and method for amplitude modulated optical pickup for a stringed instrument

A modulated light receiver includes a photo-sensitive element, an electromagnetic interference (EMI) detection circuit, and a decision-making controller. The photo-sensitive element is configured to generate an electrical signal in response to modulated light. The electromagnetic interference (EMI) detection circuit is configured to generate an electrical signal in response to EMI. The decision-making controller is electrically coupled to the photo-sensitive element and the EMI detection circuit, wherein the decision-making controller generates an output based on the inputs received from the photo-sensitive element and the EMI detection circuit.

System and method of mitigating electromagnetic interference (EMI) in modulated light detection systems

Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.

Extended short-wave infrared strain-layered superlattice on indium arsenide substrate and associated methods

Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device wafer, mounting the device wafer to a first carrier wafer, thinning the device wafer while the device wafer is mounted to the first carrier wafer, releasing the device wafer from the first carrier wafer, singulating the device wafer into individual dies, each die having an infrared focal plane array, and hybridizing the individual dies to a read out integrated circuit.

Wafer-level back-end fabrication systems and methods

A method of fabricating a superlattice structure requires that atoms of a first III-V semiconductor compound be introduced into a vacuum chamber such that the atoms are deposited uniformly on a substrate. Atoms of at least one additional III-V compound are also introduced such that the atoms of the two III-V compounds form a repeating superlattice structure of alternating thin layers. Atoms of a surfactant are also introduced into the vacuum chamber while the III-V semiconductor compounds are being introduced, or immediately thereafter, such that the surfactant atoms act to improve the quality of the resulting SL structure. The surfactant is preferably bismuth, and the III-V semiconductor compounds are preferably GaSb along with either InAs or InAsSb; atoms of each material are preferably introduced using molecular beam epitaxy. The resulting superlattice structure is suitably used to form at least a portion of an IR photodetector.

Method of fabricating a superlattice structure

A structure comprised of an InAsSb layer adjacent to a GaSb layer, with the adjacent InAsSb and GaSb layers repeating to form a superlattice (SL). The structure is preferably an unstrained SL, wherein the composition of the InAsSb layer is InAsSb; the InAsSblayers are preferably lattice-matched to the GaSb layers. The SL structure is preferably arranged such that the Sb component of the InAsSb layers reduces the strain in the SL structure so that it is less than that found in an InAs/GaSb Type-II Strained Layer Superlattice (SLS). The present SL structure is suitably employed as part of an infrared photodetector.

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Ventura, CA, United States of America

Andrew D Hood