Western Digital Technologies, Inc.

Andrew Chen

Zheng Gao

Quang Le

Brian Rodrick York

Xiaoyong Liu

Cherngye Hwang

Kuok San Ho

James Mac Freitag

Hisashi Takano

Christian Kaiser

Thao Anh Nguyen

Susumu Okamura

Hongquan Jiang

Yongchul Ahn

Son T Le

Michael Gribelyuk

Alan Spool

Jinming Liu

Xing-Cai Guo

Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.

Nitrogen doped oxides for lower bandgap

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

Aspects of the present disclosure generally relate to a magnetic recording head of a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and spintronic device disposed between the main pole and the trailing shield. The spintronic device comprises a negative polarization layer (NPL) disposed on the main pole, the NPL comprising FeTi, FeV, FeCr, or FeN, an interface layer disposed on the NPL, the interface layer comprising V, Cr, or Ru, a spacer layer disposed on the interface layer, and a spin torque layer (FGL) disposed on the spacer layer. When current is applied to the spintronic device, the NPL and a first interface disposed between the NPL and the interface layer have a negative spin polarization while the FGL and a second interface disposed between the FGL and the spacer layer have a positive spin polarization.

Spintronic device having negative interface spin scattering

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San Jose, CA, United States of America

Andrew Chen