Applied Materials, Inc.

Andrew Ceballos

Kenichi Ohno

Ludovic Godet

Karl J Armstrong

Amita Joshi

Yuriy Melnik

Takashi Kuratomi

Brian Alexander Cohen

Fariah Hayee

Alexia Adilene Portillo Rivera

Embodiments of the present disclosure generally relate to densified nanoimprint films and processes for making these densified nanoimprint films, as well as optical devices containing the densified nanoimprint films. In one or more embodiments, a densified nanoimprint film contains a base nanoimprint film and a metal oxide disposed on the base nanoimprint film and in between the nanoparticles. The base nanoimprint film contains nanoparticles, where the nanoparticles contain titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, indium tin oxide, silicon nitride, or any combination thereof. The metal oxide contains aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, indium oxide, indium tin oxide, hafnium oxide, chromium oxide, scandium oxide, tin oxide, zinc oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon oxide, silicon nitride, silicon oxynitride, or any combination thereof.

Methods for increasing the density of high-index nanoimprint lithography films

A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

Interfacial layer for optical film performance

Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.

Doped amorphous optical device films and deposition via incorporation of dopant atoms

Embodiments of the present disclosure generally relate to encapsulated optical devices and methods for fabricating the encapsulated optical devices. In one or more embodiments, a method for encapsulating an optical device includes depositing a metallic silver layer on a substrate, depositing a barrier layer on the metallic silver layer, where the barrier layer contains silicon nitride, a metallic element, a metal nitride, or any combination thereof, and depositing an encapsulation layer containing silicon oxide on the barrier layer.

Methods for encapsulating silver mirrors on optical structures

An optical device is provided. The optical device includes an optical device substrate having a first surface; and an optical device film disposed over the first surface of the optical device substrate. The optical device film is formed of titanium oxide. The titanium oxide is selected from the group of titanium(IV) oxide (TiO), titanium monoxide (TiO), dititanium trioxide (TiO), TiO, TiO, δ-TiO, where x is 0.68 to 0.75, and TiO, where n is 3 to 9, the optical device film has a refractive index greater than 2.72 at a 520 nanometer (nm) wavelength, and a rutile phase of the titanium oxide comprises greater than 94 percent of the optical device film.

Titanium oxide optical device films deposited by physical vapor deposition

Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, an imprint composition is provided and contains a plurality of passivated nanoparticles, one or more solvents, a surface ligand, an additive, and an acrylate. Each passivated nanoparticle contains a core and one or more shells, where the core contains one or more metal oxides and the shell contains one or more passivation materials. The passivation material of the shell contains one or more atomic layer deposition (ALD) materials, one or more block copolymers, or one or more silicon-containing compounds.

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Santa Clara, CA, United States of America

Andrew Ceballos