Applied Materials, Inc.

Alza Corporation

Quswami, Inc.

Andrew C Lam

Atul D Ayer

Yihwan Kim

Jawahar M Gidwani

Lawrence G Hamel

Attila Horvath

Suneel K Gupta

Jeri D Wright

Padmaja Shivanand

Diane R Guinta

Carol A Christopher

Samuel R Saks

Zahedeh Hatamkhany

Richard G Weyers

Zhiyuan Ye

Satheesh Kuppurao

Arash Hazeghi

David K Carlson

David E Edgren

Judy A Magruder

Errol C Sanchez

Michael A DesJardin

Saurabh Chopra

Noymi Yam

Manish Hemkar

Howard Beckford

Padmanabh Bhatt

Phillip R Nixon

Sylvia L Seroff

Patrick S Wong

Xinliang Lu

Jianhua Zhou

Suhail Anwar

Chien-Teh Kao

Zheng John Ye

Sean M Seutter

Yuji Maeda

See-Eng Phan

Patrick S L Wong

Jacob W Smith

R Suryanarayanan Iyer

Sunderraj Thirupapuliyur

Zeqiong Zhao

Sanjeev Tandon

Thomas Mele

Randhir P Singh Thakur

Yoshitake Nakajima

Hshiang An

Fu-ting Chang

Noymi V Yam

Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.

Impedance control of local areas of a substrate during plasma deposition thereon in a large PECVD chamber

An energy conversion device for conversion of various energy forms into electricity. The energy forms may be chemical, photovoltaic or thermal gradients. The energy conversion device has a first and second electrode. A substrate is present that has a porous semiconductor or dielectric layer placed thereover. The substrate itself can be planar, two-dimensional, or three-dimensional, and possess internal and external surfaces. These substrates may be rigid, flexible and/or foldable. The porous semiconductor or dielectric layer can be a nano-engineered structure. A porous conductor material is placed on at least a portion of the porous semiconductor or dielectric layer such that at least some of the porous conductor material enters the nano-engineered structure of the porous semiconductor or dielectric layer, thereby forming an intertwining region.

Pre-equilibrium system and method using solid-state devices as energy converters using nano-engineered porous network materials

An energy conversion device for conversion of chemical energy into electricity. The energy conversion device has a first and second electrode. A substrate is present that has a porous semiconductor or dielectric layer placed thereover. The porous semiconductor or dielectric layer can be a nano-engineered structure. A porous catalyst material is placed on at least a portion of the porous semiconductor or dielectric layer such that at least some of the porous catalyst material enters the nano-engineered structure of the porous semiconductor or dielectric layer, thereby forming an intertwining region.

System and method for converting chemical energy into electrical energy using nano-engineered porous network materials

Pre-equilibrium system and method using solid-state devices as energy converters using nano-engineered porous network

Methods of selectively and epitaxially forming a silicon-containing material on a substrate surface contained within a process chamber are provided. In one or more embodiments, the pressure in the process chamber is reduced during deposition of material on the substrate and increased during etching of material from the substrate. According to an embodiment, process gases are flowed into the chamber through first zone and a second zone to provide a ratio of the amount of gas flowed to the first zone and the amount of gas flowed to the second zone. In one or more embodiments, the first zone is an inner radial zone and the second zone is an outer radial zone, and ratio of inner zone gas flow to outer zone gas flow is less during deposition than during etching. According to one or more embodiments, the selective epitaxial process includes repeating a cycle of a deposition and then an etching process, and an optional purge until the desired thickness of an epitaxial layer is grown.

Selective epitaxy process control

Methods and devices for maintaining a desired therapeutic drug effect over a prolonged therapy period are provided. In particular, oral dosage forms that release drug within the gastrointestinal tract at an ascending release rate over an extended time period are provided. The dosage forms may additionally comprise an immediate-release dose of drug.

Methods and devices for providing prolonged drug therapy

Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Apparatus to control semiconductor film deposition characteristics

Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.

Formation of epitaxial layer containing silicon and carbon

Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.

Selective formation of silicon carbon epitaxial layer

Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.

Method of forming conformal silicon layer for recessed source-drain

Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.

Method to control semiconductor film deposition characteristics

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South San Francisco, CA, United States of America

Andrew C Lam