University of California

Applied Materials, Inc.

Samsung Electronics Co., Ltd.

Merck Patent Gmbh

Taiwan Semiconductor Manufacturing Comp. Ltd.

Georgia Tech Research Corporation

Wayne State University

University of Notre Dame Du Lac

Andrew C Kummel

Srinivas D Nemani

Mary Edmonds

William C Trogler

Keith Tatseun Wong

Jessica Sevanne Kachian

Mei Yin Chang

Ellie Y Yieh

Naomi Yoshida

Tobin Kaufman-Osborn

Christopher Ahles

Jong Choi

Sarah L Blair

Kasra Sardashti

Thomas James Kipps

James J Wang

Bradley T Messmer

Michael Breeden

Kiarash Kiantaj

Natalie Mendez

Iljo Kwak

Ana B Sanchez

Manuel Ruidiaz

Jian Yang

Steven J Wolf

Raymond Hoiman Hung

Atif Noori

Mansour Moinpour

Sang Wook Park

Erin C Ward

Ravindra Kanjolia

Namsung Kim

Alexander Liberman

Victor Wang

Christopher Barback

Yunil Cho

James Huang

Hyunwoong Kim

Suman Datta

Wilman Tsai

Charles H Winter

Zi-Wei Fang

Hsiang-Pi Chang

Tony R Reid

Shariq Siddiqui

Adam Brand

Yeshaiahu Fainman

Muhannad S Bakir

Lin Dong

Dengliang Yang

Lin Pang

Kevin A Papke

Yogita Pareek

Farah Hedjran

Daniel Moser

Brandon Hong

Bhagawan Sahu

Hong-Fa Luan

Jonathan Hollin

Tyler Kent

Scott Ueda

Harshil Kashyap

Ajay Kumar Yadav

Ashay Anurag

Ming-Jui Li

Mike Breeden

Hotaik Lee

Nyi Myat Khine Linn

Mahmut Kavrik

Cheng-Hsuan Kuo

SeongUk Yun

Thomas Gredig

Tsai-Wen Sung

Steve Wolf

Tsai W Sung

Vanessa Herrera

Emily Sierra Thomson

Maximillian Clemons

Jun Hong Park

Kai Ni

Mahmut Sami Kavrik

Jeongwon Park

Forest Bohrer

Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) layers/films, and methods of forming low resistivity metal films. Ru layers/films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt)+OALD, as well as a two-step ALD process using Ru(DMBD)(CO)+TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp)+Oto increase layer/film thickness. The Ru layer/films and methods of preparing Ru layers/films described herein may be suitable for use in barrierless via-fills, as well as at M0/M1 interconnect layers.

Method of forming low-resistivity Ru ALD through a bi-layer process and related structures

Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.

Ultra high-k hafnium oxide and hafnium zirconium oxide films

A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices

Provided by the inventive concept are methods for fabricating semiconductor devices, such as methods of atomic layer deposition (ALD). Aspects of the inventive concept include methods for depositing and forming Ru metal layers having low resistivity, forming Ru metal layers without the need for a post-deposition annealing step, forming Ru metal layers selectively on portions of a substrate without the need for passivation, and providing Ru metal layers for use in back end of the line (BEOL) applications in semiconductor devices that do not require a liner/barrier layer.

Methods of performing selective low resistivity Ru atomic layer deposition and interconnect formed using the same

A semiconductor structure includes a nanofog oxide adhered to an inert 2D or 3D surface or a weakly reactive metal surface, the nanofog oxide consisting essentially of 0.5-2 nm AlOnanoparticles. The nanofog can also consists of sub 1 nm particles. Oxide layers can be formed on the nanofog, for example a bilayer stack of AlO—HfO. Additional examples are from the group consisting of ZrO, HfZrO, silicon or other doped HfOor ZrO, ZrTiO, HfTiO, LaO, YO, GaO, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO, silicon or other doped HfOor ZrO. The structure provides the basis for various devices, including MIM capacitors, FET transistors and MOSCAP capacitors.

Semiconductor structure with nanofog oxide adhered to inert or weakly reactive surfaces

Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

Methods of forming stacked integrated circuits using selective thermal atomic layer deposition on conductive contacts and structures formed using the same

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

High selectivity atomic layer deposition process

The present inventive concept is related to methods for passivating an oxide layer and methods of selectively depositing a metal, metal nitride, metal oxide, or metal silicide layer on a metal, metal oxide, or silicide layer over an oxide layer including exposing the oxide layer to a passivant that selectively binds to the oxide layer over the metal, metal oxide, or silicide layer, and selectively growing the metal, metal nitride, metal oxide or metal silicide layer on the metal, metal oxide or silicide layer.

Passivation of silicon dioxide defects for atomic layer deposition

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

Selective deposition of metal oxide by pulsed chemical vapor deposition

Ultrasound imaging is a non-invasive, non-radioactive, and low cost technology for diagnosis and identification of implantable medical devices in real time. Developing new ultrasound activated coatings is important to broaden the utility of in vivo marking by ultrasound imaging. Ultrasound responsive macro-phase segregated micro-composite thin films were developed to be coated on medical devices composed of multiple materials and with multiple shapes and varying surface area. The macro-phase segregated in films having silica micro-shells in polycyanoacrylate produces strong color Doppler signals with the use of a standard clinical ultrasound transducer. Electron microscopy showed a macro-phase separation during slow curing of the cyanoacrylate adhesive, as air-filled silica micro-shells were driven to the surface of the film. The air sealed in the hollow space of the silica shells acted as an ultrasound contrast agent and echo decorrelation of air exposed to ultrasound waves produces color Doppler signals.

Ultrasound responsive micro-composite markers

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

High selectivity atomic later deposition process

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

An N-bit non-volatile multi-level memory cell (MLC) can include a lower electrode and an upper electrode spaced above the lower electrode. N ferroelectric material layers can be vertically spaced apart from one another between the lower electrode and the upper electrode, wherein N is at least 2 and at least one dielectric material layer having a thickness of less than 20 nm can be located between the N ferroelectric material layers.

Non-volatile multi-level cell memory using a ferroelectric superlattice and related systems

A composition for coating a medical device and a coated medical device are provided. The composition includes a polymeric matrix having non-toxic quantum dots or a fluorophore or both. The polymeric matrix contains the quantum dots or fluorophore and binds as a coating to the medical device. Coated medical devices can be readily identified within or outside of a body and in open or laparoscopically surgeries, greatly reducing or eliminating the risk of a retained foreign object.

Fluorescent and/or NIR coatings for medical objects, object recovery systems and methods

A method for forming a high-k oxide includes forming a nanofog of AlOnanoparticles and conducting subsequent ALD deposition of a dielectric on the nanofog. A nanofog oxide is adhered to an inert 2D or 3D surface, the nano oxide consisting essentially of sub 1 nm AlOnanoparticles. Additional oxide layers can be formed on the nanofog. Examples are from the group of selected from the group consisting of ZrO, HfZrO, silicon or other doped HfOor ZrO, ZrTiO, HfTiO, LaO3, YO, GaO, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO, silicon or other doped HfOor ZrO.

Method for ALD deposition on inert surfaces via Al2O3 nanoparticles

Growing community of inventors

San Diego, CA, United States of America

Andrew C Kummel