Gm Global Technolgoy Operations, Inc.

Hrl Laboratories, LLC

Dynalloy, Inc.

Microsoft Technology Licensing, LLC

University of Michigan

The Boeing Company

Other

Andrew C Keefe

Geoffrey P McKnight

Nancy L Johnson

Alan L Browne

Guillermo A Herrera

Christopher Paul Henry

Christopher Burton Churchill

Paul W Alexander

Sloan Patrick Smith

William B Barvosa-Carter

Nilesh D Mankame

Xiujie Gao

David W Shahan

Geoffrey P Mc Knight

Chia-Ming Chang

John Andrew Shaw

Ryan T Freeman

Alexander R Gurga

Norman K Bucknor

Richard J Skurkis

Peter Maxwell Sarosi

Jacob John Mikulsky

Jeffrey W Brown

James Ryan Yates

Patrick B Usoro

Adam Franklin Gross

James H Schaffner

Kevin Scott Callahan

Jacob Michael Hundley

Jamie J Childress

Keyvan R Sayyah

Gary Lee Jones

William B Carter

Oleg M Efimov

Bahram Khalighi

Brian Kevin Guenter

Neel Suresh Joshi

Pamela R Patterson

Charles W Wampler, Ii

Shanying Cui

Jan Henning Aase

Cameron G Massey

Nicholas William Pinto

Raymond Sarkissian

Robert E Doty

John Anthony Cafeo

Kevin Geary

Ukpai I Ukpai

Brian N Limketkai

Richard Michael Kremer

Erik S Daniel

Wayne Brown

Randolph C Camp

Christopher B Henry

Geoffrey P Mcknight

Richard Stewart Ross

Bill Barvosa-Carter

Brian Wayne Neff

Chris Henry

Douglas M Smick

Gavin Chang

Randolph C Camp Iii

An isolation system and method are disclosed. The isolation system includes a beam that includes a first end and a second end. The isolation system may include at least one clamping block comprising first elastomeric material, and the first end may be coupled with the first elastomeric material by the at least one clamping block. An end condition of the buckling beam may be varied based on compression stiffening of the first elastomeric material.

Isolation system and method

A method of forming a curved semiconductor includes: forming a device layer on a semiconductor substrate; forming a metal layer on the device layer; removing the semiconductor substrate from the device layer; and curving the device layer and the metal layer.

Curved semiconductor and method of forming the same

In at least one embodiment, a rotational spring is provided with adjustable stiffness and includes at least one beam arranged about an axis between an input tuning port and an output port, wherein the input tuning port is configured to change an effective bending length of at least one beam so as to change a shear stiffness with respect to the input tuning port and the output port.

Torsion springs with changeable stiffness

A method of manufacturing a hybrid focal-plane array includes: forming a read-out integrated circuit with integral bending slit; forming a detector die separately from the read-out integrated circuit and including a detector with integral bending slit; and joining the read-out integrated circuit and the detector die to each other such that the read-out bending slit and the detector bending slit are aligned with each other.

Hybrid focal-plane array and method of manufacturing the same

A continuous wave (CW) heterodyne light detection and ranging (LIDAR) air velocity sensor system that comprises a first light emitting structure arranged to send a signal light in a first direction in space; a second light emitting structure arranged to produce a local oscillator light having a wavelength different from the wavelength of the signal light by a predetermined wavelength; a receiver arranged to receive light from said first direction in space; and a first optical mixer for mixing the received light with said local oscillator light.

CW LIDAR wind velocity sensor for operation on a stratospheric vehicle

A method of manufacturing a curved semiconductor die includes: designing a semiconductor die design by conducting finite element analysis of an initial semiconductor die design having a partial spherical curvature, the initial semiconductor die design including a shape of a semiconductor die and a location and shape of a slit in the semiconductor die; when a size of a gap at the slit in the curved semiconductor die is outside a tolerance, modifying the initial semiconductor die design to provide a revised semiconductor die design and conducting another finite element analysis thereof; when the size of the gap at the slit in the curved semiconductor die is within the tolerance, manufacturing a microfabrication mask utilizing the initial semiconductor die design or the revised semiconductor die design having the size of the gap within the tolerance; forming a semiconductor die by utilizing the microfabrication mask; and curving the semiconductor die.

Method of manufacturing a curved semiconductor die

A method of testing a SMA element includes connecting the SMA element to a validation tool, and applying an electrical current to the SMA element over a test cycle. A resistance of the SMA element during the test cycle is measured, while the electrical current is being applied. The measured resistance of the SMA element during the test cycle is correlated to an estimated strain value of the SMA element during the test cycle. A temperature of the SMA element during the test cycle is estimated. A stress in the SMA element during the test cycle is estimated from a stress predicting grid, using the estimated strain value and the estimated temperature of the SMA element during the test cycle. The proper functionality of the SMA element may be determined based on the estimated stress in the SMA element.

Method of testing a shape memory alloy element, and a validation system therefor

Techniques for fabricating a semiconductor chip having a curved surface include placing a substantially flat photonic sensor chip on a recessed surface of a mold such that an active region of the photonic sensor chip at least partially covers a concave central region of the mold and an inactive region of the photonic sensor chip at least partially covers a convex peripheral region of the mold. The mold has a radially varying curvature and the recessed surface includes the concave central region and the convex peripheral region concentrically surrounding the concave central region. Pressure may be applied on the photonic sensor chip to press and bend the photonic sensor chip into the mold.

Bending semiconductor chip in molds having radially varying curvature

A lighting assembly includes a light source, such as an ultraviolet (UV) light source that is configured to emit UVC light, and a reflector system including a base having an internal central crest that is configured to direct emitted light away from the light source.

Reflector system for a lighting assembly

Techniques for fabricating a semiconductor die having a curved surface can include placing a substantially flat semiconductor die in a recess surface of a concave mold such that corners or edges of the semiconductor die are unconstrained or are the only portions of the semiconductor die in physical contact with the concave mold. The semiconductor die can include through-die cut lines that can lead to substantially less tension in the semiconductor die as compared to the case where the semiconductor die does not include through-die cut lines. Accordingly, such through-die cut lines can allow for achieving relatively large curvatures.

Strain relieving die for curved image sensors

A negative stiffness torsional spring. A plurality of spokes secured between a hub and an outer cylinder assembly are preloaded in compression. As the hub is rotated, the stiffness of the torsional spring is negative over a range of angles.

Assembly with negative torsional stiffness

Growing community of inventors

Encino, CA, United States of America

Andrew C Keefe