Motorola Corporation

Advanced Technology Development Facility, Inc.

Andrew C Campbell

Papu D Maniar

Reza Moazzami

Robert E Jones

James Beach

Charles Stager

Robert Edwin Jones, Jr

Shuji Ikeda

Michael Gotskowski

Jeff Wetzel

Methods for fabricating semiconductor structures are provided. A first layer may be deposited onto a substrate followed by the deposition of a second layer onto the first layer. A plurality of line structures may be etched in the second layer. A third layer, deposited onto the plurality of line structures of the second layer, may subsequently be etched to expose the plurality of line structures in the second layer. The plurality of line structures in the second layer may be removed, leaving an etched third layer. The etched third layer may be used as a mask to etch the first layer to form a semiconductor structure in the first layer. In some respects, the methods may include steps for etching the substrate using the etched first layer. The methods may also provide annealing the etched substrate to form a corrugate substrate surface.

Methods for fabricating semiconductor structures

A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.

Capacitor having a metal-oxide dielectric

Process for forming a capacitor having a metal-oxide dielectric

Fluctuations may occur in the vapor flux of a chemical being delivered in an otherwise inert gas stream from various causes. For example, the decrease in vapor flux over time may occur due to unintended condensation, instability in the delivery system and for other reasons. It has been discovered that a vapor flux monitor may be used in any system involved in the delivery of a vapor flux of a particular chemical reagent. The apparatus has a small aperture or hole through which a gas sample is introduced under low pressure. The sample undergoes a sudden, rapid pressure drop causing condensation of the reagent vapor into droplets where a relative flux can be determined by a measuring device, such as an in situ particle monitor (ISPM). This information can then be used to adjust the flow rate of the reagent. The vapor flux monitor can be adjusted to remove and analyze specific chemical reagents, and samples may be taken at any suitable point from the system. Further, the vapor flux monitor has particular application for systems using high flow rates of reagents, e.g. low pressure chemical vapor deposition (LPCVD) reactors, and reagents with low volatility, particularly organo-metallic compounds such as metal .beta.-diketonates.

Apparatus for chemical vapor deposition and method of use

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Austin, TX, United States of America

Andrew C Campbell