Ibis Technology Corporation

Zymet, Inc.

Extrion Corporation

Andrew B Wittkower

Geoffrey Ryding

A Stuart Denholm

James K Hirvonen

A method of manufacturing SIMOX heterostructures using a single implant sequence and an increasing range of ion beam energies is disclosed. The method produces SIMOX materials having thin, continuous buried oxide layers having sharp interfaces and which are substantially free of silicon islands.

Simox materials through energy variation

An ion implantation process for producing a buried insulating layer of silicon dioxide in a silicon substrate which takes advantage of the effects of surface erosion and sputtering inherent to the ion implantation process. The process allows the production of an insulating layer buried within a silicon semiconductor wherein the width of the insulating layer can be contoured by controlling the beam energy during implantation.

Implantation profile control with surface sputtering

A method of controlling the temperature of an article comprised of predetermined material during treatment of the article in vacuum comprises providing a heat conductive substance having a solid, rigid state at the temperature of the treatment, having a molten state at a higher temperature below the minimum damage temperature of the article, and being chemically nonreactive, nonwetting and nonadhesive at the higher temperature with a first portion of the article. The first portion of the article to be treated is immersed in molten heat conductive substance, a second portion of the article to be treated remaining unimmersed, exposed for treatment, and the substance is caused to solidify about the immersed first portion. The solid heat conductive substance is maintained in heat conductive relationship with a temperature control surface, and the exposed second portion of the article is treated in vacuum while the temperature of the surface and thereby, via the heat conductive substance, the temperature of the article is controlled during treatment. Thereafter, following treatment, the heat conductive substance is reheated to cause the substance to be in molten state, and the treated article is removed. In one aspect, the method involves controlling the temperature of an article during treatment with ion beams under vacuum of pressure of the order of 10.sup.-5 torr. Apparatus is also described.

Method and apparatus for controlling article temperature during

An isolation lock through which a workpiece item can move in a path between first and second regions at different pressures, the lock comprising a housing having an upper item entrance and a lower item exit at opposite sides of the housing, a movable member within the housing defining an item-receiving surface disposed substantially in a plane which lies at a constant acute angle to the horizontal regardless of its position to enable gravity movement of the workpiece over the surface, the member movable to translate the item-receiving surface between upper and lower positions in which, respectively, the uppermost portion of the surface is adjacent the entrance to receive the workpiece and the lowermost portion of the surface is adjacent the exit to deliver the workpiece and means providing an air-tight seal between the exit and the surface when the surface is in its upper position and between the entrance and the surface when the surface is in its lower position. The movable member is shown as a piston movable in reciprocating linear motion, the item-receiving surface comprising an end surface of the piston, and an internal flange is provided intermediate the entrance and exit, this flange disposed to engage the piston when the piston is in its upper position, a resilient seal member being disposed between the flange and the piston to provide the air-tight seal between the exit and the surface.

Growing community of inventors

Rockport, MA, United States of America

Andrew B Wittkower