Nitronex Corporation

International Rectifier Corporation

Andrei Vescan

Jerry Wayne Johnson

Robert Joseph Therrien

Jeffrey D Brown

Kevin J Linthicum

Edwin Lanier Piner

Allen W Hanson

John Claassen Roberts

Pradeep Rajagopal

Walter H Nagy

Sameer Singhal

James W Cook, Jr

Ricardo M Borges

Apurva D Chaudhari

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Gallium nitride material transistors and methods associated with the same

Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.

Gallium nitride material devices including an electrode-defining layer and methods of forming the same

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Herzogenrath, Germany

Andrei Vescan