Nxp B.v.

Koninklijke Philips Corporation N.v.

Andrei Mijiritskii

Nicolaas Lambert

Pierre Hermanus Woerlee

Victor Martinus Gerardus Van Acht

Bernardus Hendrikus Wilhelmus Hendriks

Stein Kuiper

Sjoerd Stallinga

Paul Van Der Sluis

Maarten Kuijper

Teunis Willem Tukker

Albert Hendrik Jan Immink

Bart Van Rompaey

Victor M G Van Acht

Coen Theodorus Hubertus Fran Liedenbaum

The invention relates to a rewritable optical record carrier () comprising a recording stack () of layer (), a recording layer comprising a phase-change recording material, and a second dielectric layer (), having a thermal barrier layer () arranged adjacent to said first dielectric layer.

Rewritable optical record carrier

A One Time Programmable (OTP) memory cell () comprising a first, metallic layer () coated with a second, conductive stable transition compound () with an insulating layer () there-between. The first and second layers () are selected according to the difference in Gibbs Free Energy between them, which dictates the chemical energy that will be generated as a result of an exothermic chemical reaction between the two materials. The materials of the first and second layers () are highly thermally stable in themselves but, when a voltage is applied to the cell (), a localized breakdown of the insulative layer () results which creates a hotspot () that sets off an exothermic chemical reaction between the first and second layers (). The exothermic reaction generates sufficient heat () to create a short circuit across the cell and therefore reduce the resistance thereof.

Anti-fuse memory device

An amplifier/buffer composed from circuit elements of a single threshold and single conductivity type, comprising an input stage for receiving one or more inputs for buffering/amplification and providing an intermediate to control output of the amplifier/buffer. The intermediate signal is provided to a boosting circuit configured to boosts said signal when said signal has exceeded a predetermined value. The amplifier/buffer further has an output stage for receiving at least said signal and providing an amplified/buffered output.

Single threshold and single conductivity type amplifier/buffer

The present invention relates to a drive for accessing an optical record carrier () comprising means () for determining the type of record carrier, in particular for distinguishing a read-only record carrier from a recordable or rewritable record carrier having a wobbled groove in the lead-in zone, said means comprising: a DPD measuring unit () for measuring the differential phase detection (DPD) signal, a PP measuring unit () for measuring the push-pull (PP) signal in case no DPD signal could be measured, a wobble locking unit () for locking, in case a PP signal could be measured, to the wobble embedded in said wobbled groove using a first and/or a second polarity setting, and an indication unit () for generating a first indication signal indicating that the record carrier is a read-only record carrier if a DPD signal could be measured and that the record carrier is a recordable or rewritable record carrier if no DPD signal but a PP signal could be measured and if locking to the wobble has been successful. In a further embodiment a second indication signal in generated indicating the type of polarity in case of a recordable or rewritable record carrier.

Drive and method for determining the type of optical record carrier

In an optical scanning device () capable of scanning an information plane of an optical record carrier () of different types such as BD, DVD and CD, the diameter of the radiation spot on the detector () is dependent on the numerical aperture of the objective system () that is used for scanning the record carrier An optimal design of the optical detection system for scanning a BD, result in a small radiation spot for the other types such as DVD and CD. By implementing an optical element () that increases the diameter of the radiation spot in the situation a DVD or CD is scanned, the influence of stray light is reduced and the tracking signals are improved

Optical head with switchable diameter of the radiation spot on the radiation detector

In an example embodiment, an electronic circuit comprises a memory matrix with rows and columns of memory cells. First row conductors are provided for each of the rows. Second row conductors correspond to pairs of rows, each successive row forming a respective pair with a preceding one of the rows, so that each pair overlaps with one row of the next pair. Column conductors are provided for each of the columns. Each of the memory cells comprises an access transistor, a node and a first and a second resistive memory element. The access transistor has a control electrode coupled to the first row conductor of the row of the memory cell, a main current channel coupled between the column conductor for the column of the memory cell and the node. The first and second the resistive memory element are coupled between the node and the second row conductors for the pairs of rows to which the memory cell belongs.

Electronic circuit with a memory matrix

A logic assembly () is composed from circuit elements of a single threshold and single conductivity type and comprises a logic circuitry () having at least a set of switches each having a main current path and a control terminal. The main current path forms a series arrangement having first and second conducting terminals coupled to power supply lines. The main current paths being coupled to a common node that forms an output of logic assembly (). The control terminals of said switches being coupled to clock circuitry for providing mutually non-overlapping clock signals to said control terminal. The logic assembly further comprises an output boosting circuit () for boosting the output of said logic assembly () including a capacitive means () for enabling supply of additional charge to the output of said logic assembly (). It further includes a bootstrapping circuit () for enabling an additional supply of charge to a first end of said capacitive means, resulting in a boosted voltage at a second end of said capacitive means.

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Zaltbommel, Netherlands

Andrei Mijiritskii