Fairchild Semiconductor Corporation

Semiconductor Components Industries, LLC

Cree Gmbh

Cree Sweden Ab

Farichild Semiconductor Corporation

Andrei Konstantinov

Christopher Harris

Jan-Olov Svederg

Cem Basceri

Thomas Neyer

Kent Bertilsson

Jaume Roig-Guitart

Martin Domeij

Kyeongseok Park

Fredrik Allerstam

Jangkwon Lim

Thi Thu Phuong Pham

A SiC Schottky rectifier with surge current ruggedness is described. The Schottky rectifier includes one or more multi-layer bodies that provide multiple types of surge current protection.

Schottky rectifier with surge-current ruggedness

In a general aspect, a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC MOSFET can also include a gate structure that includes a gate oxide layer, an aluminum nitride layer disposed on the gate oxide layer, and a gallium nitride layer of the second conductivity disposed on the aluminum nitride layer.

Silicon carbide field-effect transistors

In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.

Termination structures with reduced dynamic output capacitance loss

A power SiC MOSFET with a built-in Schottky rectifier provides advantages of including a Schottky rectifier, such as avoiding bipolar degradation, while reducing a parasitic capacitive charge and related power losses, as well as system cost. A lateral built-in channel layer may enable lateral spacing of the MOSFET gate oxide from a high electric field at the Schottky contact, while also providing current limiting during short-circuit events.

SiC MOSFET with built-in Schottky diode

SiC Schottky rectifierwith surge current ruggedness. As referenced above, the Schottky rectifiermay be configured to provide multiple types of surge current protection.

In a general aspect, a silicon carbide (SiC) field-effect transistor (FET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC FET can further include a spacer layer of the first conductivity type disposed on the source region the body region and the spreading layer, and a lateral channel region of the first conductivity type disposed in the spacer layer. The SiC FET can also include a gate structure that includes an aluminum nitride layer disposed on the lateral channel region, and an aluminum gallium nitride layer of the second conductivity disposed on the AlN layer.

In a general aspect, a silicon carbide (SiC) rectifier can include a substrate of a first conductivity type, a drift region of the first conductivity type, a junction field effect transistor (JFET) region of the first conductivity type, a body region of a second conductivity type, an anode implant region of the first conductivity type, and a channel of the first conductivity type. The channel can be in contact with and disposed between the JFET region and the anode implant region. A portion of the channel between the anode implant region and the JFET region can be disposed in the body region, The channel can be configured to be off under zero-bias conditions, and on at a positive turn-on voltage.

Low turn-on voltage silicon carbide rectifiers

A semiconductor power device may include a Silicon Carbide (SiC) layer having an active power device formed on a first surface thereof. An Ohmic contact layer may be formed on a second, opposing surface of the SiC layer, the Ohmic contact layer including Nickel Silicide (NiSix) with a first silicide region containing a first precipitate of non-reacted carbon disposed between the SiC layer and a second silicide region. The second silicide region may be disposed between the first silicide region and a third silicide region, and may include a mixture of a first precipitate of refractory metal carbide and a second precipitate of non-reacted carbon. The third silicide region may contain a second precipitate of refractory metal carbide. A solder metal layer may be formed on the Ohmic contact layer, with the third silicide region disposed between the second silicide region and the solder metal layer.

Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device

In at least one general aspect, a silicon carbide (SiC) device can include a drift region and a termination region at least partially surrounding the SiC device. The termination region can have a first transition zone and a second transition zone. The first transition zone can be disposed between a first zone and a second zone, and the second zone can have a top surface lower in depth than a depth of a top surface of the first zone. The first transition zone can have a recess, and the second transition zone can be disposed between the second zone and a third zone.

Avalanche-rugged silicon carbide (SiC) power device

In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate. The apparatus can further include a gate dielectric disposed on a sidewall and a bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with the body region and the gate dielectric on the bottom surface defining a second interface with the body region. The apparatus can still further include a gate electrode disposed on the gate dielectric and a lateral channel region disposed in the body region, the lateral channel region being defined along the second interface.

Silicon-carbide trench gate MOSFETs and methods of manufacture

In a general aspect, an apparatus can include a silicon carbide (SiC) trench gate MOSFET with improved operation due, at least in part, to a reduced gate capacitance. In the SiC trench gate MOSFET, a thick gate oxide can be formed on a bottom surface of the gate trench and a built-in channel, having a vertical portion and a lateral portion, can be formed to electrically connect a vertical inversion-layer channel, such as in a channel stopper layer, to a vertical JFET channel region and a drift region.

Silicon-carbide trench gate MOSFETs

In at least one general aspect, a SiC device can include a drift region of a first conductivity type, a shielding body, and a Schottky region. The SiC device can include a rim having a second conductivity type at least partially surrounding the shielding body and the Schottky region. The SiC device can include a termination region at least partially surrounding the rim and having a doping of the second conductivity type. The termination region can have a transition zone disposed between a first zone and a second zone where the first zone has a top surface lower in depth than a depth of a top surface of the second zone and the transition zone has a recess.

Avalanche-rugged silicon carbide (SiC) power Schottky rectifier

In one general aspect, a power rectifier device can include a drift layer including silicon carbide of n-type conductivity, and a Schottky electrode disposed on the drift layer where the Schottky electrode and a surface of the drift layer can provide a Schottky contact. The power rectifier device can also include an array of p-type regions disposed underneath the Schottky electrode.

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Sollentuna, Sweden

Andrei Konstantinov