Infineon Technologies Austria Ag

Qimonda Ag

Andrei Josiek

Franz Hirler

Peter Baars

Stefan Tegen

Wolfgang Roesner

Hans-Peter Moll

Gerhard Enders

Martin Popp

Klaus Muemmler

Stefan Jakschik

Werner Graf

Peter Lahnor

Matthias Kroenke

Bernd Hintze

Lars Heineck

Arnd Scholz

Alessandro Ferrara

Gouri Sankar Kar

A transistor device includes a semiconductor substrate having a first major surface, a cell field, and an edge termination region laterally surrounding the cell field. The cell field includes elongate trenches that extend from the first major surface into the semiconductor substrate and that are positioned substantially parallel to one another such that one or more inner elongate trenches are arranged between two outermost elongate trenches and elongate mesas, each elongate mesa being formed between neighbouring elongate trenches. The elongate mesas include a drift region, a body region on the drift region and a source region on the body region. In a top view, one or both of the outermost elongate trenches has a different contour from the one or more inner elongate trenches.

Transistor device

One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.

Interconnect structure for semiconductor devices

Growing community of inventors

Dresden, Germany

Andrei Josiek