Infineon Technologies Ag

Atotech Deutschland Gmbh

Qimonda Ag

Andreas Walter

Recai Sezi

Marcus Halik

Anna Maltenberger

Klaus Lowack

Hagen Klauk

Reimund Engl

Guenter Schmid

Ute Zschieschang

Gerhard Steinberger

Joerg Schumann

Thomas Beck

Thomas Weitz

Thomas Happ

Peter Baars

Günter Schmid

Stefan Tegen

Kurt Hoffmann

Heiko Brunner

Klaus Muemmler

Christine Dehm

Ingo Gnüchtel

Horst Hartmann

Christof Suchentrunk

G&uuml;nter Schmid

Holger Bera

Sven Rückbrod

Bernd Froese

Holger H&ouml;sch

Sezi Recai

Igor Kasko

Katharina Muskulus

Robert Banfic

Roland Haasmann

The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.

Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor

The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and an unsaturated compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the unsaturated compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The unsaturated compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.

Plating bath composition and method for electroless plating of palladium

The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aromatic compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aromatic compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aromatic compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.

The present invention relates to a method for manufacture of wire bondable and solderable surfaces on noble metal electrodes. The noble metal electrodes are activated by depositing a seed layer of palladium or a palladium alloy layer by electroless plating at 60 to 90&#xb0; C. Next, an intermediate layer is deposited onto the seed layer followed by deposition of the wire bondable and/or solderable surface finish layer(s) onto the intermediate layer. This method is particularly suitable in the production of optoelectronic devices such as light emitting diodes (LEDs).

Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes

The present invention relates to a method for forming a copper pillar on a semiconducting substrate, the copper pillar having an underbump metallization area comprising a metal less noble than copper and optionally a solder bump on the top portion, and having a layer of a second metal selected from tin, tin alloys, silver, and silver alloys deposited onto the side walls of said copper pillar. A layer of a first metal which is more noble than copper is deposited onto the entire outer surface of the copper pillar prior to deposition of the second metal layer. The layer of a second metal then has at least a reduced number of undesired pin-holes and serves as a protection layer for the underlying copper pillar.

Manufacture of coated copper pillars

An integrated circuit includes an array of diodes and an electrode coupled to each diode. The integrated circuit includes a layer of resistance changing material coupled to the electrodes and bit lines coupled to the layer of resistance changing material. The layer of resistance changing material provides a resistance changing element at each intersection of each electrode and each bit line.

Integrated circuit including an array of diodes coupled to a layer of resistance changing material

An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit

A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.

NOR and NAND memory arrangement of resistive memory elements

Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.

Pentaarylcyclopentadienyl units as active units in resistive memory elements

A dielectric for aluminum and copper metalizations is stable at high temperatures. Surprisingly, in spite of the elimination of water during the cyclization, the polymeric dielectrics are very suitable for filling narrow trenches. The filled trenches exhibit no defects and bubbles or cracks. The polybenzoxazoles have dielectric constants of k&#x2266;2.7 and are suitable as an electrical insulator. Furthermore, these materials adhere very well on all surfaces relevant for micro-electronics.

Poly-o-hydroxyamide, polybenzoxazole from the poly-o-hydroxyamide, electronic component including a polybenzoxazole, and processes for producing the same

A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising in which Rand R, independently of one another, may have the following meaning: &#x2014;H, -alkyl, -aryl, -heteroaryl, &#x2014;O-alkyl, &#x2014;O-aryl, &#x2014;O-heteroaryl, &#x2014;SH, &#x2014;S-alkyl, &#x2014;S-aryl, &#x2014;S-heteroaryl, &#x2014;CO-alkyl, &#x2014;CO-aryl, &#x2014;CO-heteroaryl, &#x2014;CS-alkyl, &#x2014;CS-aryl, &#x2014;CS-heteroaryl, -halogen, &#x2014;CN and/or &#x2014;NO, in which Rand R, Rand R, Rand Rtogether may form a ring, in which Rto R, independently of one another, may have the following meaning: &#x2014;H, -alkyl, -aryl, -heteroaryl, &#x2014;O-alkyl, &#x2014;O-aryl, &#x2014;O-heteroaryl, &#x2014;NH, &#x2014;N(alkyl), &#x2014;N(aryl), &#x2014;N(heteroaryl), &#x2014;SH, &#x2014;S-alkyl, &#x2014;S-aryl, &#x2014;S-heteroaryl, &#x2014;CO-alkyl, &#x2014;CO-aryl, &#x2014;CO-heteroaryl, &#x2014;CS-alkyl, &#x2014;CS-aryl, &#x2014;CS-heteroaryl, -halogen, &#x2014;CN and/or &#x2014;NO, A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.

Memory cell, method for the production thereof and use of a composition therefor

Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

Resistive memory for low-voltage applications

Poly-o-hydroxyamides include binaphthyl substituents as repeating units. The poly-o-hydroxyamides can be cyclized to give the polybenzoxazole by heating. Pore formation occurs, so that a dielectric having a very low dielectric constant k of less than 2.5 is obtained.

Methods for producing a dielectric, dielectric having self-generating pores, monomer for porous dielectrics, process for preparing poly-o-hydroxyamides, process for preparing polybenzoxazoles, and processes for producing an electronic component

The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, ane suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.

Growing community of inventors

Egloffstein, Germany

Andreas Walter