Siemens Aktiengesellschaft

Osram Opto Semi-conductors Gmbh Co. Ohg

Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Technische Universitat Braunschweig

Technische Universitaet Braunschweig Carolo-wilhelmina

Technische Universität Braunschweig Körperschaft Des Öffentlichen Rechts

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Universität De Barcelona

Andreas Waag

Frank Fischer

Thomas Litz

Gottfried Landwehr

Hans-J&uuml;rgen Lugauer

Markus Keim

Sönke Fündling

Frederik Steib

Alexander F Pfeuffer

Patrick Rode

Tansen Varghese

Hans-Jürgen Lugauer

Adrian Stefan Avramescu

Ulrich Zehnder

Martin Mandl

Martin Straβburg

Christopher Kölper

G&uuml;nter Reuscher

Thierry Baron

Juan Daniel Prades García

Gerhard Palm

Martin Straßburg

Daria Bezshlyakh

Xue Wang

Shunfeng Li

Jana Hartmann

Erwin Peiner

Matthias Keller

Jan Gülink

Richard Neumann

Hans-Peter Steinbr&uuml;ck

Mario Nagelstrasser

Johannes Ledig

Hendrik Spende

Martin Hoffmann

Heinz Schall

Ingrid Schall

Hutomo Suryo Wasisto

Stephan Merzsch

Erik Uhde

A semiconductor device for emitting electromagnetic radiation, and to a method of producing the same, which can be used as a semiconductor-based, structured light source. The semiconductor device comprises a layer stack structure composed of an n-doped layer, an active layer and a p-doped layer, as well as a connection structure comprising conductor layers and at least one insulator layer, the conductor layers being arranged, parallel to and spaced apart from one another, along a first direction that is parallel to the active layer of the layer stack structure, and at least one insulator layer being arranged between at least two conductor layers, one or more conductor layers being electrically connected to the p-doped layer of the layer stack structure.

Semiconductor device for transmitting electromagnetic radiation and method for production thereof

An optical detection device having a light detection device and a light emission device is arranged such that the light detection side of the light detection device is optically coupled to a light emission side of a light source array of the light emission device via an examination region. The light detection device generates an electrical signal n response to light that reaches the light detection side. The light source array includes a plurality of separately actuatable electric light sources which are arranged in a matrix structure or two dimensional geometric arrangement. The object to be examined can be arranged in a desired fashion, and the light emitted by the light sources radiates via the examination region on the light detection side of the light detection device. An optical reduction is system is arranged in the beam path from the light emission side to the examination region and is configured to demagnify the light pattern which is emitted by the light sources. Thus, the examination region is irradiated by a light pattern that has been demagnified with respect to the light pattern emitted.

Optical detection device and method for operating an optical detection device

An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Optoelectronic semiconductor chip and method of manufacturing the same

An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.

Optoelectronic semiconductor chip

A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method comprises the following step: growing at least one gallium nitride column on the truncated pyramid.

Method of manufacturing of a semi-conductor element and semi-conductor element

A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate of GaAs, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer including a beryllium-containing chalcogenide.

Opto-electronic component made from II-VI semiconductor material

A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.

Method of producing a II-VI semiconductor component containing selenium and/or sulrfur

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be&mdash;Se configuration.

II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction

Component having an active layer (,), barrier layers (,), and, if appropriate, a buffer layer (,), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate (,) of Gaps, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer (,) including a beryllium-containing chalcogenide.

Growing community of inventors

Würzburg, Germany

Andreas Waag