Infineon Technologies Ag

Andreas Strasser

Klemens Pruegl

Markus Hammer

Wolfgang Raberg

Juergen Zimmer

Uwe Wahl

Bernhard Knott

Ralf-Rainer Schledz

Stefan Willkofer

Norbert Thyssen

Olaf Kuehn

Hermann Wendt

Guenther Ruhl

Norbert Druml

Michael Melzl

Reinhard Goellner

Christian Steger

Doerthe Groteloh

Philipp Stelzer

A system for driving a microelectromechanical system (MEMS) oscillating structure includes a phase error detector configured to generate a phase error signal based on measured event times and expected event times of the MEMS oscillating structure oscillating about a rotation axis; a disturbance event detector configured to detect a disturbance event based on the phase error signal and a disturbance threshold value; and a phase frequency detector (PFD) and correction circuit configured to, in response to the detected disturbance event, monitor for a plurality of measured crossing events of the MEMS oscillating structure oscillating about the rotation axis, generate a first compensation signal based on at least a first measured crossing event and a second measured crossing event to correct a frequency of the MEMS oscillating structure, and generate a second compensation signal based on a third measured crossing event to correct a phase of the MEMS oscillating structure.

Mechanical shock detection and phase and frequency correction of a MEMS mirror

A magneto resistive device having a plurality of magneto resistive sensing elements. Each of the plurality of magneto resistive sensing elements has a free layer and a reference layer. The free layer has a rounded convex contour with an aspect ratio of 2 or greater. There may be one hundred or more magneto resistive sensing elements.

Magneto resistive device

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

XMR sensors with high shape anisotropy

A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Semiconductor device and method of manufacture thereof

An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed.

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Wuppertal, Germany

Andreas Strasser