Infineon Technologies Ag

Andreas Stich

Guenther Schindler

Manfred Engelhardt

Michael Schrenk

Zvonimir Gabric

Werner Pamler

Eugen Unger

Gernot Steinlesberger

Martin Traving

An MIM capacitor includes a first capacitor electrode, which is formed in the surface of a first intermediate dielectric, a second intermediate dielectric, which is formed on the first intermediate dielectric and has an opening that exposes the first capacitor electrode, and a first electrically conducting diffusion barrier layer, which is formed on the surface of the exposed first capacitor electrode. On the diffusion barrier layer and on the side walls of the opening there is also formed a capacitor dielectric and a second capacitor electrode on top.

MIM capacitor and associated production method

In a method for manufacturing a layer arrangement, a plurality of electrically conductive structures are embedded in a substrate. Material of the substrate is removed at least between adjacent electrically conductive structures. An interlayer is formed on at least one portion of sidewalls of each of the electrically conductive structures. A first layer is formed on the interlayer where an upper partial region of the interlayer remaining free of a covering with the first layer. An electrically insulating second layer is formed selectively on that partial region of the interlayer which is free of the first layer, in such a way that the electrically insulating second layer bridges adjacent electrically conductive structures such that air gaps are formed between adjacent electrically conductive structures.

Method for manufacturing a layer arrangement and layer arrangement

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Gruenwald, Germany

Andreas Stich