Applied Materials, Inc.

Other

Toyo Advanced Technologies Co., Ltd.

Applied Materials Switzerland Sarl

Andreas Schmid

Stephen Donald Prouty

Steven E Babayan

Andrew Antoine Noujaim

Yogananda Sarode Vishwanath

Denis M Koosau

Damon Keith Cox

Leon Volfovski

Alvaro Garcia De Gorordo

Nicholas Michael Kopec

Rajinder Dhindsa

Jeffrey C Hudgens

Douglas R McAllister

Helder T Lee

Phillip A Criminale

Nicholas Michael Bergantz

Daniel Sang Byun

Evgeny Kamenetskiy

Álvaro García De Gorordo

Vijay D Parkhe

Philip Allan Kraus

Joseph Yudovsky

Leonid Dorf

Michael D Willwerth

Sumanth Banda

Sathyendra Ghantasala

Peter Muraoka

Jonathan Simmons

Paul Zachary Wirth

Brian Hayes Burrows

David Masayuki Ishikawa

Leonard Michael Tedeschi

Yaoling Pan

Patrick John Tae

Changhun Lee

Andrew Myles

Martin Perez-Guzman

Roberto Cesar Cotlear

Sanggyum Kim

Aaron Green

Alexandre Mittaz

Guillaume Merçay

A carrier includes a rigid body forming a plurality of openings and a plurality of fasteners configured to removably attach to the rigid body via the plurality of openings. A first set of fingers is configured to be removably attached to the rigid body via the plurality of fasteners and the plurality of openings. The first set of fingers is configured to support first content during first transportation of the carrier within a substrate processing system. A second set of fingers is configured to be removably attached to the rigid body via the plurality of fasteners and the plurality of openings. The second set of fingers is configured to support second content during second transportation of the carrier within the substrate processing system.

Substrate processing system carrier

An electrical connector for a substrate support assembly is disclosed herein. The electrical connector includes a first interface body, and a second interface body coupled to the first interface body and to a third interface body. The second interface body is circumscribed by the third interface body. The first interface body and the second interface body each comprise a plurality of electrical terminals disposed in sockets formed in the respective first and second interface bodies, each electrical terminal disposed in sockets of the first interface body coupled to a respective one of the electrical terminals disposed in sockets of the second interface body to form a plurality of isolated conductive electrical unions, wherein the second interface body includes a plurality of protruding sidewalls that extend into the first interface body between each of the electrical terminals of the first interface body.

Electrical connector for cooled substrate support assembly

Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

Apparatus and method for controlling edge ring variation

A substrate support assembly is described herein that includes a facility plate, a ground plate coupled to the facility plate, a fluid conduit disposed within the substrate support assembly disposed through the facility plate and the ground plate, and a connector coupled to the ground plate that houses a portion of the fluid conduit. The connector includes a biasing assembly and a fastener disposed in a pocket formed in the ground plate.

Cooled substrate support assembly for radio frequency environments

A process kit enclosure system includes surfaces to enclose an interior volume, a first support structure including first fins, a second support structure including second fins, and a front interface to interface the process kit enclosure system with a load port of a wafer processing system. The first and second fins are sized and spaced to hold process kit ring carriers and process kit rings in the interior volume. Each of the process kit rings is secured to one of the process kit ring carriers. The process kit enclosure system enables first automated transfer of a first process kit ring carrier securing a first process kit ring from the process kit enclosure system into the wafer processing system and second automated transfer of a second process kit ring carrier securing a second process kit ring from the wafer processing system into the process kit enclosure system.

Process kit enclosure system

The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Sensors and system for in-situ edge ring erosion monitor

Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

In-situ apparatus for semiconductor process module

A process kit ring adaptor includes one or more upper surfaces and one or more lower surfaces. The one or more upper surfaces are configured to support a process kit ring. The one or more lower surfaces are configured to interface with an end effector. The process kit ring adaptor supporting the process kit ring is configured to be transported on the end effector within a processing system.

Process kit ring adaptor

A calibration object is retrieved, by a first robot arm of a transfer chamber, from a processing chamber connected to the transfer chamber and placed in a load lock connected to the transfer chamber. The calibration object is retrieved from the load lock by a second robot arm of a factory interface connected to the load lock and placed at an aligner station housed in or connected to the factory interface. The calibration object has a first orientation at the aligner station. A difference is determined between the first orientation and an initial target orientation at the aligner station. A first characteristic error value associated with the processing chamber is determined based on the determined difference. The first characteristic error value is recorded in a storage medium. The aligner station is to use the first characteristic error value for alignment of objects to be placed in the processing chamber.

Calibration of an aligner station of a processing system

Embodiments described herein relate to a substrate support assembly which enables adjustment of the thermal conductivity therein. The substrate support assembly has heater and cooling channel. An adjustable thermal break disposed between the heater and the cooling channel. The adjustable thermal break has one or more fluid conduits coupled thereto and configured to flow a fluid into and out of the adjustable thermal break for variant the thermal conductivity between the heater and the cooling channel.

Adjustable thermal break in a substrate support

Examples disclosed herein are directed to a method and apparatus for determining a position of a ring within a process kit. In one example, a sensor assembly for a substrate processing chamber is provided. The sensor assembly includes a housing having a top surface, a bottom surface opposite the top surface, and a plurality of sidewalls connecting the top surface to the bottom surface. The housing also has a recess in the top surface, the recess forming an interior volume within the housing. The sensory assembly includes a bias member, and a contact member disposed on the bias member. The bias member and contact member are disposed within the recess. A sensor is configured to detect a displacement of the contact member. The displacement of the contact member corresponds to a relative position of an edge ring.

Method and apparatus for determining a position of a ring within a process kit

A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned in a groove formed in the cooling base and configured to form a seal between the cooling base and one or both of the porous plug and the body of the electrostatic chuck.

Substrate support carrier with improved bond layer protection

Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components. In one example, a semiconductor chamber component is provided that includes a powered region, a grounded region, and a fluid conduit. The fluid conduit is disposed within the semiconductor chamber component and passes through the powered and grounded regions. The fluid conduit has an end to end electrical resistance of between 0.1 to 100 M&#x3a9;.

Substrate support assembly with arc resistant coolant conduit

Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

Semiconductor processing with cooled electrostatic chuck

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Meyriez, Switzerland

Andreas Schmid