Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Andreas Schloegl

Ralf Otremba

Uwe Kirchner

Georg Meyer-Berg

Michael Treu

Marco Seibt

Wolfgang Peinhopf

Joachim Mahler

Joachim Weyers

Uwe Wahl

Christian Fachmann

Stefan Landau

Enrique Vecino Vazquez

Katarzyna Kowalik-Seidl

Mario Feldvoss

Ernst Katzmaier

Ulrich Froehler

Rene Mente

Felix Grawert

Mario Veldvoss

A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.

Semiconductor device including a gate contact structure

Various embodiments provide an electronic device, wherein the electronic device comprises a mounting surface configured to mount the electronic device to an external structure and having a first size; a backside electrode having a second size and having arranged thereon a die electrically connected to the backside electrode; wherein the first size is at least three times the second size.

Electronic device and method of manufacturing the same

A device including a semiconductor chip and metal foils. One embodiment provides a device including a semiconductor chip having a first electrode on a first face and a second electrode on a second face opposite to the first face. A first metal foil is attached to the first electrode of the semiconductor chip in an electrically conductive manner. A second metal foil is attached to the second electrode of the semiconductor chip in an electrically conductive manner.

Device including a semiconductor chip and metal foils

An electronic device and manufacturing thereof. One embodiment provides a semiconductor chip having a control electrode and a first load electrode on a first surface and a second load electrode on a second surface. A first lead is electrically coupled to the control electrode. A second lead is electrically coupled to the first load electrode. A third lead is electrically coupled to the first load electrode, the third lead being separate from the second lead. A fourth lead is electrically coupled to the second load electrode, the second and third leads being arranged between the first and fourth leads.

Electronic device and manufacturing thereof

Device including semiconductor chip and leads coupled to the semiconductor chip and manufacturing thereof

A semiconductor device includes a substrate having a chip island, a chip attached to the chip island, and encapsulation material deposited on the chip and part of the chip island. The chip island includes a first main face to which the chip is attached opposite a second main face, with the second main face of the chip island defining at least one cavity.

Semiconductor device

Growing community of inventors

Ottobrunn, Germany

Andreas Schloegl