Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Bayerische Motoren Werke Aktiengesellschaft

Syddansk Universitet

Andreas Schletz

Christoph Bayer

Uwe Waltrich

Tobias Erlbacher

Thomas Schimanek

Steffen Ziesche

Gudrun Rattmann

Florian Hilpert

Rene Richter

Hoang Linh Bach

Christian Lenz

Maximillian Hofmann

Thomas Ebel

This invention concerns a power module comprising a power device, a baseplate, circuit carrier, and a flat stacked aluminium electrolytic snubber capacitor comprising a layered structure of a cathode layer, a separator layer, comprising paper and an electrolyte and an anode layer, comprising an aluminium material with an aluminium oxide dielectric, wherein the circuit carrier are mounted on the baseplate, the power device and snubber capacitor are placed on the circuit carrier within the power module and electrically connected to the circuit carrier, the circuit carrier being configured for providing an electrical connection between the power device and the snubber capacitor.

Power module with an integrated aluminium snubber capacitor

Disclosed is a method of manufacturing a power semiconductor component arrangement or a power semiconductor component housing. The method involves a sintering process in which the plurality of layer-shaped unsintered ceramic substrates are converted into a sintered ceramic single layer or multilayer substrate or into a sintered ceramic single layer or multilayer interconnect device. Also disclosed is a power semiconductor component arrangement or a power semiconductor component housing that can be manufactured using the above method. Further disclosed are the uses of the power semiconductor component arrangement or the power semiconductor component housing.

Method of manufacturing a power semiconductor component arrangement or a power semiconductor component housing

In a method for increasing the electrical functionality, and/or service life, of power electronic modules, the power electronic circuit carrier, and/or the metallisation applied onto the power electronic circuit carrier, and/or a base plate connected, or to be connected, to a rear face of the power electronic circuit carrier, is finely structured by means of local material removal with at least one laser beam, so as to reduce thermomechanical stresses occurring during the production or operation of the module. In an alternative form of embodiment, the metallisation applied onto the front face of the power electronic circuit carrier is structured, or an already created structure is refined or supplemented, by means of local material removal with laser radiation, so as to achieve a prescribed electrical functionality of the metallisation.

Method for increasing the electrical functionality, and/or service life, of power electronic modules

A power semiconductor module, as well as a corresponding method of manufacture, are provided. The power semiconductor module has a plurality of power switches. A first subset of the power switches forms part of a first electrical current branch. A second subset of the power switches forms part of a second electrical current branch. Within the current branches, the associated power switches are arranged symmetrically with respect to the DC voltage contacts and are connected in such a way that a current density which is formed in the individual current paths which are respectively assigned to one of the power switches is at least substantially homogeneously distributed during the high frequency operation of the power semiconductor module and/or in the operation of the power switches with high voltage gradients.

Power converter module and method for production thereof

In an electrical circuit arrangement, which is formed by an RC-snubber element monolithically integrated into a semiconductor substrate, a first capacitor and a resistor of the RC-snubber element are vertically formed in a semiconductor region of a first type of doping of the semiconductor substrate. At least one further capacitor is connected in series with the first capacitor. The further capacitor is integrated laterally with the first capacitor in a semiconductor region of a second type of doping, which adjoins the semiconductor region of the first type of doping, and by virtue of the different type of doping electrically insulates the further capacitor from the semiconductor region of the first type of doping. This circuit arrangement forms a low inductance RC-snubber element with high dielectric strength, which has high heat dissipation and integration density.

RC-snubber element with high dielectric strength

In a power module that has a carrier substrate with at least one unipolar semiconductor component as a power switch, the unipolar semiconductor component is configured such that a temperature rise of the semiconductor component, from a first temperature up to which the semiconductor component heats in operation at 50% full load, to a second temperature up to which the semiconductor component heats in operation at full load, is less than a temperature rise of the semiconductor component from an initial temperature at zero load to the first temperature. As a result of the reduced temperature rise between 50% and 100% full load the service life of the power module can be lengthened.

Growing community of inventors

Erlangen, Germany

Andreas Schletz