Siltronic Ag

Andreas Sattler

Timo Mueller

Wilfried Von Ammon

Martin Weber

Walter Haeckl

Karl Mangelberger

Gudrun Kissinger

Herbert Schmidt

Michael Gehmlich

Dawid Kot

Alexander Vollkopf

Walter Heuwieser

Georg Raming

Alfred Miller

Michael Boy

Gundars Ratnieks

Juergen Vetterhoeffer

Timo Müller

Robert Kretschmer

Janis Virbulis

Maksims Surovovs

Walter Häckl

A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×10atoms/cmand not more than 6.5×10atoms/cm; a nitrogen concentration per new ASTM of not less than 1.0×10atoms/cmand not more than 1.0×10atoms/cm;

Semiconductor wafer made of single-crystal silicon and process for the production thereof

A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295&#xb0; C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800&#xb0; C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300&#xb0; C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Method for producing a semiconductor wafer composed of monocrystalline silicon

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3&#xd7;10atoms/cmand not more than 6.0&#xd7;10atoms/cm; a resistivity of the substrate wafer of not less than 5 m&#x3a9;cm and not more than 10 m&#x3a9;cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;

A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9&#xd7;10atoms/cmand not more than 6.5&#xd7;10atoms/cmand a nitrogen concentration (new ASTM) of not less than 8&#xd7;10atoms/cmand not more than 5&#xd7;10atoms/cm, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3&#xd7;10cmand not more than 4&#xd7;10cm, as determined by IR tomography.

Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery;

Semiconductor wafer composed of single-crystal silicon with high gate oxide breakdown, and a process for the manufacture thereof

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Semiconductor wafer composed of monocrystalline silicon and method for producing it

Silicon semiconductor wafers are produced by:

Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm

Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Growing community of inventors

Trostberg, Germany

Andreas Sattler