Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Oledgmbh

Andreas Rueckerl

Simeon Katz

Roland Zeisel

Tobias Meyer

Clemens Vierheilig

Michael Binder

Rainer Hartmann

Tilman Schimpke

Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Optoelectronic component, optoelectronic component group in buffer layer opening and production method for same

The invention relates to a method for structuring a nitride layer (), comprising the following steps: A) providing a nitride layer () formed with silicon nitride of a first type, B) defining regions () of said nitride layer () to be transformed, and C) inserting the nitride layer () into a transformation chamber for the duration of a transformation period, said transformation period being selected such that&#x2014;at least 80% of the nitride layer () regions () to be transformed are transformed into oxide regions () formed with silicon oxide, and&#x2014;remaining nitride layer () regions () remain at least 80% untransformed.

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

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Konzell, Germany

Andreas Rueckerl