Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Andreas Rudolph

Hubert Halbritter

Wolfgang Schmid

Martin Rudolf Behringer

Johannes Baur

Petrus Sundgren

Christoph Klemp

Ivar Tangring

Markus Broell

Alexander Tonkikh

Christoph Rupprich

Katharina Werner

Stefan Heckelmann

Teresa Baur

A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.

Method for producing a connection structure and semiconductor device

Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 &#x3bc;m.

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Optoelectronic semiconductor chip with two separate light emitting layers

A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength &#x3bb;and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength &#x3bb;, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength &#x3bb;of the first active layer and the second dominant wavelength &#x3bb;of the second active layer are different from each other.

Luminescence diode with first and second layer sequences having an arrangement of microprisms and method for producing the same

An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a p-doped region, an active region configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor chip, an n-doped region, a cover layer and a barrier region. The active region is arranged between the p-doped region and the n-doped region in a vertical direction, wherein the active region is based on a III-V semiconductor compound and the barrier region includes gallium, wherein the barrier region is configured to inhibit penetration of defects into the active region, and wherein the cover layer is arranged on the barrier region, the cover layer having a structured surface.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

An optoelectronic semiconductor chip () is specified, comprising a p-type semiconductor region (), an n-type semiconductor region (), and an active layer arranged between the p-type semiconductor region () and the n-type semiconductor region (), said active layer being designed as a multiple quantum well structure (), wherein the multiple quantum well structure () comprises quantum well layers () and barrier layers (), wherein the barrier layers () are doped, and wherein undoped intermediate layers () are arranged between the quantum well layers () and the barrier layers (). Furthermore, a method for producing the optoelectronic semiconductor chip () is specified.

Optoelectronic semiconductor chip and method for producing same

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (E) that is less than the electronic band gap (E) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (E) that is greater than the electronic band gap (E) of the first barrier layers.

Growing community of inventors

Wuppertal, Germany

Andreas Rudolph